Negative Tone Resist Composition for High-Resolution Lithography

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Solution Overview

Problem

Conventional resist compositions for negative tone development in lithography techniques face limitations in achieving excellent lithography properties due to unconsidered solubility in developing solutions, particularly in forming fine resist patterns with high resolution and uniformity.

Innovation Solution

A resist composition comprising a base component with reduced solubility in organic solvents, an acid generator, and a fluorine-containing polymeric compound, where the base component contains structural units derived from acrylate esters with specific substituents, ensuring controlled dissolution rates and improved polarity under acid action, allowing for precise pattern formation in negative tone development.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional resist composition is used for negative tone development, then the process is simple, but the lithography properties such as resolution and CDU are insufficient

Engineering Contradiction:
Improvelithography propertiesVSAvoidresist composition complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent uses a composite resist composition containing polyhydroxystyrene as base resin, fluorinated polymer as solubility control agent, and novolak resin as adhesion promoter. This multi-component system achieves excellent lithography properties including high resolution and uniform CDU by combining materials with complementary functions, resolving the contradiction between performance and complexity.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes specific parameters including the fluorine content (0.1-10 wt%), molecular weight range (10,000-1,000,000), and dissolution rate control (0.1-10 nm/s) to achieve desired lithography performance. By precisely controlling these parameters, the composition achieves high resolution and uniform CDU while maintaining manageable complexity.

Inventive Principle:
Principle #35Parameter changes

2Ease of operation

If the solubility of base resin is increased for better dissolution, then the pattern formation is improved, but the resolution and pattern uniformity deteriorate

Engineering Contradiction:
Improvedissolution performanceVSAvoidpattern uniformity
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The fluorinated polymer acts as an intermediary that modulates the solubility of the base resin. It provides controlled dissolution by interacting with both the base resin and developing solution, enabling adequate dissolution performance while maintaining pattern uniformity through its solubility control function.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent controls the dissolution rate within a specific range (0.1-10 nm/s) by adjusting the fluorine content and molecular weight of the fluorinated polymer. This parameter optimization ensures that the base resin dissolves sufficiently for pattern formation while maintaining uniformity and resolution.

Inventive Principle:
Principle #35Parameter changes

3Quantity of substance

If high concentration of base resin is used for sufficient coverage, then the film thickness is adequate, but the dissolution control and pattern precision are reduced

Engineering Contradiction:
Improveresin concentrationVSAvoidpattern precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The fluorinated polymer serves as a mediator that controls the dissolution behavior of high-concentration base resin. It enables adequate film coverage through sufficient resin content while maintaining pattern precision by regulating the dissolution rate and preventing excessive dissolution that would compromise precision.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The resist composition enables the formation of resist patterns with enhanced lithography properties, including improved CDU and high-resolution patterns, by controlling the solubility and dissolution rates of the base and fluorine-containing compounds, thereby overcoming the limitations of conventional compositions.

Implementation Method 1

an acid generator component that generates acid upon exposure

Methodology Applied
Scientific EffectPhotochemical reaction: Photopolymerisation

Implementation Method 2

The base resin used exhibits increased polarity under the action of acid, thereby exhibiting increased solubility in an alkali developing solution

Methodology Applied
Scientific EffectPolarity change: Polarisation

Data Source

PatentUS8790868B2Method of forming resist pattern and negative tone-development resist composition
Publication Date: 2014.07.29 TOKYO OHKA KOGYO CO LTD
  • US8790868B2 patent drawing
  • US8790868B2 patent drawing
  • US8790868B2 patent drawing

AI summary

A method of forming a resist pattern, the method including: forming a resist film on a substrate using a resist composition containing a base component (A) that exhibits reduced solubility in an organic solvent under the action of acid, an acid generator component (B) that generates acid upon exposure and a fluorine-containing polymeric compound (F), exposing the resist film, and patterning the resist film by negative tone development using a developing solution containing the organic solvent, thereby forming a resist pattern, wherein the base component (A) contains a resin component (A1) containing a structural unit (a1) derived from an acrylate ester, the dissolution rates of (A1) and (F) in the developing solution are each at least 10 nm/s, and the absolute value of the difference in the dissolution rates of (A1) and (F) in the developing solution is not more than 80 nm/s.