Chemically Amplified Resist Composition for High-Resolution Lithography
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Solution Overview
Problem
Current chemically amplified positive resist compositions for semiconductor microfabrication and circuit board production face challenges in achieving high-resolution patterns, particularly in lithography processes using i-rays, KrF, and electron beams, as they often result in suboptimal pattern resolution and coating properties.
Innovation Solution
A chemically amplified positive resist composition comprising a resin obtained by reacting a novolak resin, poly(hydroxystyrene), and a compound with at least two vinyl ether structures, along with an acid generator, where the poly(hydroxystyrene) is poly(p-hydroxystyrene) and the ratio of novolak resin to poly(hydroxystyrene) is between 30/70 to 70/30, and the compound is 1,4-bis(vinyloxymethyl)cyclohexane or 1,2-bis(vinyloxy)ethane, with optional protection of hydroxyl groups by 1-alkoxyalkyl or 2-oxocycloalkyl groups, and inclusion of an acid-labile group-containing resin and a basic compound.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemically amplified positive resist compositions are used, then the lithography process can be performed, but the pattern resolution is insufficient
Solution Approach 1:
The patent employs a composite resin system consisting of novolak resin, poly(hydroxystyrene), and a compound with vinyl ether structures. This composite material approach combines the advantages of each component: novolak resin provides structural stability, poly(hydroxystyrene) enhances solubility control, and the vinyl ether compound contributes to reaction functionality. The synergistic combination achieves both high pattern resolution and reliable coating properties that cannot be obtained with single-component resins.
Solution Approach 2:
The patent optimizes the molar ratio of novolak resin to poly(hydroxystyrene) within the range of 30:70 to 70:30. This parameter optimization balances the competing requirements for pattern resolution and coating performance. By carefully adjusting this compositional parameter, the resin system achieves optimal solubility characteristics and reaction behavior, resolving the contradiction between manufacturing precision and reliability.
2Manufacturing precision
If the resin composition is optimized for high resolution, then pattern formation precision improves, but coating properties deteriorate
Solution Approach 1:
The patent systematically optimizes the compositional parameters of the resin system, specifically the molar ratios of novolak resin to poly(hydroxystyrene) and the structure of the vinyl ether compound. These parameter adjustments fine-tune the resin's solubility and reaction characteristics, achieving both precise pattern formation and ease of coating without compromising either aspect.
Solution Approach 2:
The patent introduces functional groups with different properties at specific locations within the resin structure. The vinyl ether structures provide localized reactivity for pattern formation, while the hydroxystyrene segments provide localized solubility characteristics for coating performance. This local differentiation of functional properties allows simultaneous optimization of pattern formation precision and coating ease.
3Productivity
If acid generator is added to enable chemical amplification, then lithography effectiveness improves, but resin solubility control becomes challenging
Solution Approach 1:
The patent uses the resin composition itself as an intermediary system that mediates between the acid generator and the final pattern formation. The resin's carefully designed molecular structure acts as a buffer, controlling the release and distribution of acid generated by the acid generator. This intermediary function ensures that solubility changes occur only where and when needed, maintaining precision while enabling chemical amplification.
Solution Approach 2:
The patent optimizes the resin's solubility parameters through the specific combination of novolak resin, poly(hydroxystyrene), and vinyl ether compounds. These compositional parameters are tuned to ensure that the resin remains stable under normal conditions but becomes soluble when exposed to acid generated during lithography. This parameter optimization allows the acid generator to function effectively without compromising solubility control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves high-resolution patterns and improved coating properties, enhancing the effectiveness of lithography processes by ensuring the resin becomes soluble in aqueous alkali solutions upon acid generation, thereby facilitating precise pattern formation.
Implementation Method 1
an acid generator; wherein the poly(hydroxystyrene) is a poly(p-hydroxystyrene)... ensuring the resin becomes soluble in aqueous alkali solutions upon acid generation
Data Source
AI summary
The present invention provides a chemically amplified positive resist composition comprising (A) a resin obtainable by reacting a novolak resin, a poly(hydroxystyrene) and a compound having at least two vinyl ether structures, and (B) an acid generator.