Resist Composition for 50 nm Pattern Resolution
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Solution Overview
Problem
In the production of semiconductor elements, forming fine patterns with sizes of 50 nm or smaller is challenging due to non-uniform light irradiation, leading to pattern collapse and poor resolution, especially in forming fine line and space patterns and trench patterns.
Innovation Solution
A resist pattern forming method using a resist composition with a polymeric compound containing specific structural units, which undergoes negative-tone development with an organic solvent, enhancing the resist pattern's resolution and shape.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used with standard resist materials, then existing manufacturing processes can be maintained, but pattern resolution and shape quality deteriorate at 50 nm or smaller sizes
Solution Approach 1:
The patent changes the chemical parameters of the resist material by incorporating a polymeric compound with specific structural units (formula 1) that have acid-decomposable groups. This chemical parameter change enables the resist to undergo solubility changes upon acid generation during exposure, achieving negative-tone development characteristics that improve pattern resolution at 50 nm or smaller sizes while maintaining compatibility with existing lithography equipment and processes.
Solution Approach 2:
The patent uses a composite resist material composed of a polymeric compound containing both structural units with acid-decomposable groups (formula 1) and structural units without acid-decomposable groups (formula 2). This composite structure allows different parts of the polymer to perform different functions: the acid-decomposable units provide solubility change for pattern formation, while the non-decomposable units maintain the base resin's mechanical properties and transparency, achieving both high resolution and processability.
2Reliability
If exposure light intensity is increased to improve pattern formation, then lithography sensitivity improves, but light irradiation uniformity deteriorates causing pattern collapse
Solution Approach 1:
The patent changes the chemical sensitivity parameter of the resist by using a polymeric compound with acid-decomposable groups that undergo rapid solubility changes upon acid generation. This increased chemical sensitivity allows the resist to respond effectively to lower light intensities, improving lithography sensitivity while maintaining uniform exposure conditions and preventing pattern collapse that occurs with high-intensity irradiation.
3Manufacturing precision
If fine line and space patterns are formed with conventional resist materials, then pattern density increases, but pattern shape quality and resolution deteriorate
Solution Approach 1:
The patent changes the solubility parameter of the resist material by incorporating polymeric compounds with acid-decomposable groups that undergo significant solubility changes upon exposure. This parameter change enables the resist to maintain excellent pattern shape quality even at high pattern densities of 50 nm or smaller line widths, as the rapid solubility change ensures complete development of exposed regions while preserving unexposed regions.
Solution Approach 2:
The patent employs a composite polymer structure where structural units with acid-decomposable groups (formula 1) work synergistically with structural units without acid-decomposable groups (formula 2). The acid-decomposable units provide the necessary solubility contrast for high-density pattern formation, while the non-decomposable units maintain the resin's mechanical integrity and film-forming properties, achieving both high pattern density and excellent shape quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the formation of finer resist patterns with excellent shape and high resolution, even at sizes of 50 nm or smaller, with improved lithography properties and process margin.
Implementation Method 1
a chemically amplified resist composition which contains a base component (A1) and an acid-generator component (B1), wherein the base component (A1) comprises a polymeric compound having a structural unit (a01)
Implementation Method 2
a developing solution containing an organic solvent, to form a resist pattern
Data Source
AI summary
A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.