Resist Composition Reducing Pattern Surface Roughness
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Solution Overview
Problem
In the field of semiconductor and liquid crystal display manufacturing, there is a need for resist compositions that can achieve further reduction of pattern surface roughness to accommodate the ongoing miniaturization of patterns, which existing chemical amplification-type resist compositions are unable to effectively address.
Innovation Solution
A resist composition is developed that includes a resin component with specific constitutional units, represented by General Formula (a01-1) and (a02-1), which generates an acid upon exposure, altering its solubility in developing solutions, thereby reducing pattern surface roughness and improving lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemical amplification-type resist compositions are used, then lithography characteristics such as resolution and sensitivity are improved, but pattern surface roughness cannot be sufficiently reduced
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific resin components with carboxylic acid groups and acid-dissociable groups. These parameter changes in the molecular structure and chemical composition enable superior pattern surface roughness reduction while maintaining lithography performance
Solution Approach 2:
The patent uses a composite resin system combining multiple functional units: carboxylic acid groups for surface energy control, acid-dissociable groups for solubility change upon exposure, and polymer backbone structures. This composite material approach achieves both smooth patterns and good lithography characteristics
2Length of moving object
If pattern miniaturization is pursued to achieve dimensions less than 100 nm, then resolution is improved, but pattern surface roughness increases
Solution Approach 1:
The patent applies parameter changes in the resist material composition, specifically incorporating resins with controlled carboxylic acid content and acid-dissociable group ratios. This enables the formation of sub-100 nm patterns with reduced surface roughness by optimizing the chemical parameters of the resist system
Solution Approach 2:
The patent implements local quality control through specific constitutional units in the resin: carboxylic acid groups at specific positions provide local surface energy modification, while acid-dissociable groups provide localized solubility changes. This local functional differentiation enables precise pattern formation with smooth surfaces at sub-100 nm dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively reduces pattern surface roughness and enhances lithography performance, enabling the formation of fine patterns with dimensions less than 100 nm, thereby supporting the miniaturization requirements in semiconductor and liquid crystal display manufacturing.
Implementation Method 1
a resist composition generating an acid upon exposure
Implementation Method 2
having solubility in a developing solution, which is changed by action of an acid
Data Source
AI summary
A resist composition that generates an acid upon exposure is soluble in a developing solution, and is changed by action of an acid. The resist composition contains a resin component having solubility in a developing solution, which is changed by action of an acid, and has a constitutional unit represented by General Formula (a01-1) and a constitutional unit derived from a compound represented by General Formula (a02-1). In General Formula (a01-1), R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Yax01 represents a single bond or a linking group; Ax represents a sulfonyl group or a sulfoxide group; and Rax01 represents an alkyl group, an alkoxy group, a halogen atom, or a halogenated alkyl group. In General Formula (a02-1), W represents a polymerizable group-containing group, Wax0 represents a cyclic group having an (nax0+1)-valent aromaticity, which may have a substituent, Wax0 may form a condensed ring with W, and nax0 represents an integer of 1 to 3