Resist Lower Layer Film Composition for High-Speed Dry Etching
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Solution Overview
Problem
Current resist lower layer film compositions for microfabrication in semiconductor manufacturing face challenges in achieving high dry etching speed and accuracy, leading to film loss and pattern deformation, especially when using shorter wavelengths for finer pattern creation.
Innovation Solution
A resist lower layer film composition comprising a polymer with a repeating unit of (meta)acrylic ester having a hexafluoroalcohol group or its acid labile derivative, which enhances etching speed and adhesiveness, minimizing film loss and deformation, and can be used as an antireflection film to prevent halation and footing profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional resist lower layer film compositions are used, then the process is simple and materials are readily available, but the dry etching speed is slow leading to extended etching time and film loss
Solution Approach 1:
The patent changes the chemical composition parameters of the resist lower layer film by incorporating specific polymers (polyester, polyacrylate, polymethacrylate) with defined functional groups and molecular weight ranges (1,000-100,000), along with controlled amounts of glass transition temperature modifiers (-50 to 0°C), to achieve optimized dry etching speed without sacrificing pattern fidelity
Solution Approach 2:
The patent creates a composite resist lower layer film system combining base polymers (polyester, polyacrylate, or polymethacrylate) with glass transition temperature modifiers at specific concentrations (0.1-10 parts by weight per 100 parts polymer), forming a multi-component material system that achieves both high etching speed and pattern accuracy
2Manufacturing precision
If conventional resist lower layer film compositions are used, then material selection is straightforward, but film loss and upper layer resist film transformation occur during etching
Solution Approach 1:
The patent optimizes molecular weight parameters (1,000-100,000) and glass transition temperature (-50 to 0°C) of the polymer components to achieve the right balance between etching resistance and pattern fidelity, preventing both film loss and upper layer resist transformation while maintaining manufacturing precision
Solution Approach 2:
The patent applies different functional properties to different aspects of the resist lower layer film: the base polymer provides structural integrity and etching speed, while the glass transition temperature modifier enhances adhesion and pattern stability, creating localized functional zones within the material that address different requirements simultaneously
3Manufacturing precision
If shorter wavelength exposure light is used for finer patterns, then pattern resolution improves, but the requirement for high etching speed becomes more critical to prevent pattern deformation
Solution Approach 1:
The patent adjusts the glass transition temperature of the polymer components to the range of -50 to 0°C, which optimizes the film's thermal and mechanical properties during the etching process, ensuring pattern integrity is maintained even when using shorter wavelength exposure light for finer pattern rules
Solution Approach 2:
The patent prepares the resist lower layer film in advance with optimized polymer composition and glass transition temperature modifiers before the etching process, pre-configuring the material properties to prevent pattern deformation during subsequent high-speed etching operations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves fast etching speeds, reducing etching time and film loss, enabling high-accuracy pattern transfer and preventing halation and footing profiles, thus forming excellent resist patterns on substrates.
Implementation Method 1
The resist lower layer film composition has a high dry etching speed and thus can shorten an etching time period to prevent a film loss and a transformation of an upper layer resist film
Implementation Method 2
An antireflection function is necessary in the case of the optical exposure
Data Source
AI summary
A resist lower layer film composition, wherein an etching speed is fast, thus an etching time period can be shortened to minimize a film thickness loss of a resist pattern and a deformation of the pattern during etching, therefore, a pattern can be transferred with high accuracy and an excellent pattern can be formed on a substrate is provided.The resist lower layer film composition comprising at least a polymer having a repeating unit represented by the following general formula (1).