Replacement Liquid for Resist Patterns Using Sulfonyl and Nitrogen Compounds
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Solution Overview
Problem
In the refinement of resist patterns for high integration LSI, issues such as resist pattern collapse, increased defects, surface roughness, and shape variation occur due to surface tension and residual components from developers, which are not effectively addressed by existing methods.
Innovation Solution
A replacement liquid comprising a sulfonyl group-containing compound, a nitrogen-containing compound, and water is applied between resist patterns to replace the liquid present between them, helping to remove residual developer components, reduce surface energy variation, and enhance the hardness and stability of the resist patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If water is used to wash resist patterns after development, then cleaning of residual developer is achieved, but resist pattern collapse occurs due to surface tension
Solution Approach 1:
The invention changes the chemical composition parameters of the rinse liquid by adding specific surfactants (anionic, cationic, nonionic, or amphoteric) to water, thereby modifying its surface tension and wetting properties to prevent resist pattern collapse while maintaining cleaning effectiveness
Solution Approach 2:
The invention introduces surfactant molecules as intermediary substances between water and resist patterns, which reduce surface tension and mediate the interaction between the rinse liquid and resist structures, preventing collapse during the washing process
2Device complexity
If conventional water rinsing is used, then processing simplicity is maintained, but surface energy variation of resist films increases
Solution Approach 1:
The invention modifies the surface energy parameters of the rinse liquid through surfactant addition, enabling uniform surface energy distribution across resist films while maintaining the overall simplicity of the rinsing process
3Productivity
If developer components remain between resist patterns, then manufacturing process is simplified, but pattern defects increase
Solution Approach 1:
The invention uses surfactants as intermediary substances that enhance the penetration and removal of developer components from between resist patterns, improving pattern quality without adding significant process steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents resist pattern collapse, reduces defects, suppresses surface energy variation, and increases the hardness and stability of resist patterns, thereby improving the overall quality and reliability of the resist pattern formation process.
Implementation Method 1
the resist pattern collapse is considered to occur also when a negative pressure is generated between the patterns due to the surface tension of water when the patterns are washed with water
Implementation Method 2
applying the above-mentioned replacement liquid of liquid filling between resist patterns to between the resist patterns to replace the liquid present between the resist patterns
Data Source
AI summary
Problem: A replacement liquid of liquid filling between resist patterns and a method for producing resist patterns using the same. Means of solution: To provide a replacement liquid of liquid filling between resist patterns comprising a sulfonyl group-containing compound (A); a nitrogen-containing compound (B); and a solvent (C).