Resist Composition Stabilizing Pattern Shape During Rinse
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Solution Overview
Problem
The formation of resist patterns with minute dimensions is hindered by shape changes during rinse treatments, particularly pattern slippage, which affects the precision of semiconductor and liquid crystal display element manufacturing.
Innovation Solution
A resist pattern formation method using a resist composition containing a high-molecular compound with specific constituent units that change solubility in response to acid exposure, including a lactone-containing polycyclic group and acid-decomposable groups, to stabilize the resist pattern shape during development and rinse treatments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a rinse treatment is performed after development to remove residual developing solution, then cleaning effectiveness is improved, but resist pattern shape changes and pattern slippage occur
Solution Approach 1:
The patent modifies the chemical parameters of the resist composition by incorporating specific base resin components with controlled polarity and solubility characteristics. These parameter changes allow the resist pattern to maintain structural integrity during rinse treatment while still enabling effective cleaning of residual developing solution.
Solution Approach 2:
The patent uses a composite resist composition comprising multiple components including base resin, novolac resin, and specific additive components. This composite structure provides both the necessary adhesion resistance during rinsing and the required solubility contrast for pattern formation, resolving the contradiction between cleaning effectiveness and pattern shape precision.
2Measurement precision
If the polarity of base resin increases to enhance solubility change upon acid action, then lithography sensitivity is improved, but resist pattern shape stability during rinse treatment deteriorates
Solution Approach 1:
The patent carefully controls the polarity parameter of the base resin within a specific range (0.3 to 0.7 by Hildebrand solubility parameter) to achieve optimal balance. This parameter optimization ensures sufficient solubility change for lithography sensitivity while maintaining adequate shape stability during rinse treatment.
Solution Approach 2:
The patent introduces different functional components at specific locations within the resist composition: highly polar components for sensitivity enhancement in exposed areas, and less polar components for shape stability in unexposed areas. This local differentiation resolves the contradiction between sensitivity and stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures a satisfactory resist pattern shape by suppressing shape changes and pattern slippage, enhancing the precision and reliability of pattern formation in miniaturized semiconductor and liquid crystal display element manufacturing.
Implementation Method 1
a chemically amplified resist composition containing a base material component whose solubility in a developing solution changes by the action of an acid and an acid generator component that generates an acid upon exposure
Implementation Method 2
a resist material in which an exposed area becomes soluble in a developing solution is called a positive type
Data Source
AI summary
A resist pattern formation method including formation of a resist film, exposure, development, and subsequent rinsing using a resist composition containing a high-molecular compound having a constituent unit represented by the formula (a0-1), a constituent unit containing an acid decomposable group whose polarity increases by the action of an acid, and a constituent unit containing a group represented by the formula (a2-r-1). R represents a hydrogen atom, an alkyl group, or a halogenated alkyl group; Ra01 represents a lactone-containing polycyclic group, an —SO2-containing polycyclic group, or a cyano group-containing polycyclic group; Ra′21 represents a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, —COOR″, —OC(═O)R″, a hydroxyalkyl group, or a cyano group; R″ represents a hydrogen atom or an alkyl group; and n′ represents an integer of from 0 to 2.