Resist Pattern Trimming via Gas Plasma for Semiconductor Manufacturing
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Solution Overview
Problem
In photolithographic processes using light sources with wavelengths of 193 nm or less, undesired resist residues and poor profiles are formed during the creation of fine resist patterns, particularly in 30 nm design rules, leading to issues with semiconductor device manufacturing.
Innovation Solution
A method involving the use of gas plasmas and plasma vacuum-ultraviolet (VUV) rays to trim and densify resist patterns, with specific gas mixtures and plasma treatments to remove residues, improve profiles, and enhance tolerances to dry etching, allowing for the formation of fine-size resist patterns without unwanted residues.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithographic process using light source with wavelength of 193 nm or less is used to form fine resist patterns, then finer patterns can be formed, but undesired resist residues and poor profiles are formed
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment and VUV irradiation on the resist patterns before the photolithographic exposure process. This pre-treatment modifies the resist material properties in advance, making it more resistant to forming undesired residues during subsequent fine pattern formation with 193 nm light source
Solution Approach 2:
The patent changes physical and chemical parameters of the resist material through plasma treatment and VUV irradiation. The treatment alters the resist's molecular structure, cross-linking density, and surface properties, transforming it from a state prone to residue formation to a state with improved profile control and reduced scum/foot defects
2Manufacturing precision
If photolithographic process using light source with wavelength of 193 nm or less is used to form fine resist patterns, then finer patterns can be formed, but profile deterioration occurs
Solution Approach 1:
The patent performs preliminary plasma treatment and VUV irradiation to pre-condition the resist patterns before photolithography. This preliminary action creates a more stable and resistant resist structure that maintains its profile integrity during the subsequent fine pattern formation process with 193 nm light
Solution Approach 2:
The patent creates a composite structure by combining the resist material with plasma-treated surface layers and cross-linked molecular structures. This composite resist system exhibits enhanced profile stability and resistance to deterioration during fine pattern formation, combining the benefits of original resist properties with improved structural integrity
3Ease of manufacture
If conventional resist patterns are used in fine pattern formation, then manufacturing process is simple, but tolerances to dry etching are low
Solution Approach 1:
The patent changes the chemical and physical parameters of the resist material through plasma treatment and VUV irradiation. These parameter changes increase the resist's density, cross-linking, and chemical stability, thereby improving its tolerance to dry etching processes while maintaining the overall manufacturing process flow
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively forms resist patterns with fine profiles and high dry etching tolerances, improving critical dimension uniformity and reducing surface roughness, thereby addressing the challenges of resist residue formation and profile deterioration in semiconductor manufacturing.
Implementation Method 1
The resist patterns may be exposed to plasma vacuum-ultraviolet (VUV) rays having a wavelength smaller than 150 nm to change the profiles of the resist patterns and to form the processed resist patterns
Implementation Method 2
The resist patterns may be exposed to plasma vacuum-ultraviolet (VUV) rays having a wavelength smaller than 150 nm
Implementation Method 3
The first gas plasma may be plasma that is obtained from a mixture of at least one first gas and at least one second gas
Implementation Method 4
The resist patterns may be exposed to plasma vacuum-ultraviolet (VUV) rays having a wavelength smaller than 150 nm to change the profiles of the resist patterns
Data Source
AI summary
A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.