Resist Treatment Liquid for Semiconductor Pattern Formation
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Solution Overview
Problem
In the manufacturing of semiconductor devices, the formation of fine patterns using photoresist compositions leads to issues such as pattern collapse in line-space patterns and omission failures in contact hole patterns, as existing developers and rinsing liquids fail to effectively address these problems simultaneously.
Innovation Solution
A treatment liquid comprising a combination of a first organic solvent with an SP value of 16.3 MPa1/2 or less and a second organic solvent with an SP value of 17.1 MPa1/2 or more, where the first solvent is a hydrocarbon-based solvent with 10 or more carbon atoms and the second solvent is a ketone-based solvent, is used for development and rinsing to suppress pattern collapse and omission failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional developers and rinsing liquids are used for fine pattern formation, then the development process can be completed, but pattern collapse occurs in line-space patterns and omission failures occur in contact hole patterns
Solution Approach 1:
The invention changes the chemical parameters of the treatment liquid by specifying solvents with particular solubility parameters (SP values). The first solvent has an SP value of 16.3 MPa1/2 or less, and the second solvent has an SP value of 17.1 MPa1/2 or more. This parameter control optimizes the balance between development effectiveness and pattern integrity, preventing both pattern collapse and omission failures simultaneously
Solution Approach 2:
The invention uses a composite treatment liquid comprising multiple organic solvents with different solubility parameters. This composite formulation combines the advantages of different solvent types to achieve both sufficient development capability and adequate pattern support, resolving the contradiction between manufacturing precision and reliability
2Productivity
If the pattern size is reduced to achieve finer patterns, then integration density increases, but the distance between patterns decreases leading to increased capillary force and pattern collapse
Solution Approach 1:
By controlling the solubility parameters of the treatment liquid components, the invention modifies the interaction between the liquid and the resist pattern. The specific SP value ranges create optimal swelling and dissolution characteristics that reduce capillary forces during development, thereby maintaining pattern dimensional stability even at reduced feature sizes and higher integration densities
3Productivity
If the contact hole pore diameter is reduced to achieve finer patterns, then pattern density increases, but omission failures such as edge connection or failure to open occur more frequently
Solution Approach 1:
The controlled solubility parameters of the treatment liquid create optimal dissolution rates and swelling characteristics that ensure complete contact hole opening even at reduced diameters. The first solvent (SP ≤ 16.3 MPa1/2) provides strong development action for opening holes, while the second solvent (SP ≥ 17.1 MPa1/2) maintains pattern integrity, preventing edge connection and omission failures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed treatment liquid effectively prevents pattern collapse in line-space patterns and omission failures in contact hole patterns by controlling the solubility parameters of the solvents, ensuring better affinity and penetration to improve pattern formation accuracy.
Implementation Method 1
containing a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more
Data Source
AI summary
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having an SP value of 16.3 MPa1/2 or less and a second organic solvent having an SP value of 17.1 MPa1/2 or more.