Resist Treatment Liquid for Semiconductor Patterning
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Solution Overview
Problem
In the process of manufacturing semiconductor devices, such as integrated circuits, the formation of fine patterns using photoresist compositions leads to issues like pattern collapse in line-space patterns and omission failures in contact hole patterns, where the developer and rinsing liquids fail to effectively address these problems simultaneously.
Innovation Solution
A treatment liquid comprising a combination of a first organic solvent with a relative dielectric constant of 4.0 or less and a second organic solvent with a relative dielectric constant of 6.0 or more, specifically including hydrocarbon-based and ketone-based solvents, is used for development and rinsing to suppress pattern collapse and omission failures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional developer or rinsing liquid is used, then the development or washing process can be completed, but pattern collapse occurs in fine line-space patterns due to large capillary forces
Solution Approach 1:
The invention changes the physical-chemical parameters of the treatment liquid by specifying precise ranges for relative dielectric constant (4.0-30.0) and surface tension (15-50 mN/m). This parameter optimization reduces capillary forces during the development and rinsing processes, preventing pattern collapse in fine line-space patterns while maintaining effective development performance
Solution Approach 2:
The invention uses composite organic solvent systems consisting of multiple solvent components with complementary properties. By combining solvents with different dielectric constants and surface tensions (e.g., ketone-based, ester-based, hydrocarbon-based solvents), the treatment liquid achieves optimized overall performance that prevents pattern collapse while maintaining development effectiveness
2Manufacturing precision
If a conventional developer or rinsing liquid is used, then the development or washing process can be completed, but omission failures occur in fine contact hole patterns due to small pore diameters
Solution Approach 1:
The invention optimizes the surface tension parameter (15-50 mN/m) and dielectric constant (4.0-30.0) of the treatment liquid to improve penetration into fine contact hole patterns. The reduced surface tension enables the treatment liquid to effectively wet and rinse small pore diameters, preventing omission failures while maintaining pattern integrity
Solution Approach 2:
The invention tailors the treatment liquid properties to address local requirements of different pattern types. The optimized surface tension and dielectric constant create locally adaptive wetting and penetration characteristics that specifically address the challenges of fine contact hole patterns with small pore diameters
3Productivity
If the pattern size is reduced to achieve higher integration, then more circuits can be formed, but the distance between patterns becomes shorter causing larger capillary forces
Solution Approach 1:
The invention changes the surface tension parameter to a lower range (15-50 mN/m) and optimizes dielectric constant (4.0-30.0) to reduce capillary forces. This parameter optimization enables the use of smaller pattern sizes for higher integration while preventing pattern collapse that would otherwise occur due to increased capillary forces in densely packed patterns
4Productivity
If the contact hole size is reduced to achieve higher integration, then more holes can be formed, but the pore diameter becomes smaller causing omission failures
Solution Approach 1:
The invention optimizes surface tension (15-50 mN/m) and dielectric constant (4.0-30.0) parameters to improve penetration and wetting of reduced-size contact holes. These parameter changes enable effective rinsing of smaller pore diameters, preventing omission failures while maintaining the higher integration benefits of reduced contact hole sizes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed treatment liquid effectively reduces pattern collapse in line-space patterns and omission failures in contact hole patterns by controlling the affinity and solubility of the resist film, ensuring better pattern formation and resolution.
Implementation Method 1
containing a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more
Data Source
AI summary
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can simultaneously suppress the occurrence of pattern collapse in a resist L/S pattern and the occurrence of omission failure in a resist C/H pattern.The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for subjecting a resist film obtained from an actinic ray-sensitive or radiation-sensitive resin composition to at least one of development or washing, and contains an organic solvent, in which the treatment liquid contains a first organic solvent having a relative dielectric constant of 4.0 or less and a second organic solvent having a relative dielectric constant of 6.0 or more.