Resist Underlayer Composition for Fine Patterning

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Solution Overview

Problem

As semiconductor patterns become increasingly finer, the resist underlayer must be thin to prevent resist pattern collapse while maintaining uniformity and adhesion to the photoresist, and improving sensitivity to exposure light sources.

Innovation Solution

A resist underlayer composition comprising a polymer with specific structural units, a photoacid generator that does not decompose at high temperatures, and a solvent, which enhances the sensitivity to exposure light and prevents pattern collapse.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the resist underlayer thickness is reduced to prevent pattern collapse, then pattern stability is improved, but sensitivity to exposure light source deteriorates

Engineering Contradiction:

Improvepattern stabilityVSAvoidsensitivity to exposure light source

Core Design Contradiction:

ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the chemical composition parameters of the resist underlayer by incorporating specific polymers with high refractive index groups (such as aromatic rings, heterocyclic groups) and controlling the molecular weight and structure of polymer components. This allows the thin underlayer to maintain high light absorption efficiency and sensitivity while preventing pattern collapse through improved mechanical properties from the specific polymer structure

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite resist underlayer system by combining specific polymers (including polymers with heterocyclic groups and aromatic rings) with photoacid generators and solvents in optimized ratios. This composite formulation achieves both mechanical stability for thin layers and high sensitivity to exposure light through the synergistic effects of different components

Inventive Principle:

Principle #40Composite materials

2Reliability

If the resist underlayer thickness is reduced, then pattern collapse is prevented, but adhesion to photoresist may deteriorate

Engineering Contradiction:

Improvepattern collapse preventionVSAvoidadhesion to photoresist

Core Design Contradiction:

ReliabilityVSStrength

Solution Approach 1:

The patent modifies the chemical structure parameters of the polymer components by incorporating specific functional groups (hydroxyl groups, carboxyl groups, amino groups) that enhance interfacial adhesion. These chemical modifications allow the thin underlayer to maintain strong bonding with the photoresist layer while preventing pattern collapse through the rigid structural support provided by the heterocyclic and aromatic ring systems

Inventive Principle:

Principle #35Parameter changes

3Reliability

If the resist underlayer thickness is reduced, then pattern collapse is prevented, but uniformity of thickness may deteriorate

Engineering Contradiction:

Improvepattern collapse preventionVSAvoiduniformity of thickness

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The patent optimizes the molecular weight parameters of the polymer components and controls the viscosity of the resist underlayer composition to ensure uniform coating at thin thicknesses. The specific polymer structure with controlled molecular weight distribution enables better flow and leveling during the coating process, achieving uniform thickness while maintaining the mechanical stability needed to prevent pattern collapse

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The composition effectively prevents resist pattern collapse during fine patterning, improves patterning performance, and enhances energy efficiency by increasing sensitivity to exposure light.

Implementation Method 1

a photoacid generator having a mass reduction rate of about 0% after 3 minutes from the time of measurement during thermogravimetric analysis (TGA) at 205° C. in an air atmosphere

Methodology Applied

Scientific EffectPhotoacid generation: Photodissociation

Implementation Method 2

the resist underlayer should have improved sensitivity, such as having a high refractive index and a low extinction coefficient, to the light source used in photolithography

Methodology Applied

Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS20250053091A1Resist underlayer composition, and method of forming patterns using the composition

Publication Date: 2025.02.13 SAMSUNG SDI CO LTD

AI summary

Disclosed are a resist underlayer composition, and a method of forming a pattern using the resist underlayer composition. The resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof, a photoacid generator having a mass reduction rate of about 0% after 3 minutes from the time of measurement during thermogravimetric analysis (TGA) at 205° C. in an air atmosphere (air gas), and a solvent. The definitions of Chemical Formula 1 and Chemical Formula 2 are as described in the specification.