Resist Underlayer Film Composition for Dry Etching and Planarization
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Solution Overview
Problem
Conventional resist underlayer films in semiconductor manufacturing lack sufficient dry etching resistance and planarization properties, leading to pattern collapse and poor transfer of fine patterns to substrates during the miniaturization of semiconductor devices.
Innovation Solution
A composition comprising a polymer with specific structures and a crosslinking agent, combined with an organic solvent and a flowability accelerator, is used to form a resist underlayer film that provides enhanced etching resistance and planarization capabilities, allowing for improved filling and flatness on substrates with complex structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a photoresist film is thinned to improve resolution for fine patterning, then resolution performance is improved, but dry etching resistance is reduced leading to pattern collapse
Solution Approach 1:
The patent divides the single photoresist film into two separate layers: a thin photoresist film for achieving high resolution patterning, and a separate organic film (resist underlayer) providing dry etching resistance. This segmentation allows each layer to be optimized independently - the photoresist film can be made thin for resolution while the underlayer provides the necessary mechanical support and etching resistance during substrate processing.
2Stability of the object's composition
If a photoresist film is made thinner to prevent pattern collapse, then pattern stability is improved, but the ability to directly process substrates is lost
Solution Approach 1:
The patent introduces an organic film (resist underlayer) as an intermediary layer between the thin photoresist film and the substrate. This intermediary provides the necessary mechanical support and dry etching resistance during substrate processing, enabling the thin photoresist film to maintain pattern stability while the substrate is processed. The organic film acts as a buffer that protects the fragile fine patterns during the etching process.
3Ease of manufacture
If conventional resist underlayer films are used, then ease of manufacture is maintained, but dry etching resistance and planarization properties are insufficient
Solution Approach 1:
The patent changes the chemical composition parameters of the organic film by specifying polymers with particular structural characteristics (formula (1B) with specific R groups and molecular weight ranges). These parameter changes - including molecular weight control (500-5,000) and specific chemical structure selection - enhance both dry etching resistance and planarization properties while maintaining compatibility with conventional manufacturing processes like spin-coating and thermal curing.
4Stability of the object's composition
If a polymer with hydroxy groups is used in the resist underlayer film, then film formation is improved, but dry etching resistance is reduced
Solution Approach 1:
The patent applies local quality by specifying particular structural features in the polymer formula (1B) - using hydrocarbon groups (R2, R3, R4) without hydroxy groups in the main chain structure. This localized structural modification - eliminating hydroxy groups from positions that would compromise etching resistance - allows the polymer to maintain good film formation properties through its backbone structure while achieving the necessary dry etching resistance for substrate processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves better dry etching resistance and planarization, enabling precise transfer of fine patterns to substrates, even on substrates with dense, high-aspect-ratio structures, and maintains film uniformity and solvent resistance during processing.
Implementation Method 1
spin-coating a substrate to be processed with the composition for forming a resist underlayer film
Implementation Method 2
heating the substrate coated with the composition for forming a resist underlayer film at a temperature of 100° C. or higher and 800° C. or lower for 10 to 600 seconds to form a cured film
Data Source
AI summary
The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1A); (B) a crosslinking agent represented by the following general formula (B-1); and (C) an organic solvent, where the polymer (A) contains no hydroxy groups and the crosslinking agent (B) is contained in an amount of 5 to 50 parts by mass relative to 100 parts by mass of the polymer (A). This provides: a composition for forming a resist underlayer film that exhibits much better dry etching resistance than conventional resist underlayer film materials; a patterning process in which the composition is used as a resist underlayer film material; and a method for forming a resist underlayer film.