Resist Underlayer Film Composition for Planarization and Etch Balance

The patent changes the chemical composition parameters of the resist underlayer film by incorporating specific polymer compounds (polyester, polyacrylic acid, polyacrylamide) with controlled molecular weights and ratios. This allows the film to maintain solubility in alkaline developer while achieving the desired antireflective properties and preventing intermixing with photoresist, thereby resolving the contradiction between reliability and manufacturing precision.

The patent uses composite material formulation by combining multiple polymer compounds in specific ratios (polyester 30-70 parts, polyacrylic acid 20-50 parts, polyacrylamide 10-30 parts) with crosslinking agents and other additives. This composite approach enables the film to simultaneously achieve insolubility for preventing intermixing and controlled etchability for selective removal, while maintaining photoresist thickness integrity.

The patent modifies the chemical parameters by introducing specific polymer compounds with defined molecular weights and ratios, along with crosslinking agents (silane, titanate, zirconate, or tungstate). This parameter optimization enhances the film's resistance to alkaline hydrogen peroxide water and improves filling and planarization characteristics while maintaining ease of film formation through standard deposition processes.

The patent employs composite material construction by combining multiple polymer compounds (polyester, polyacrylic acid, polyacrylamide) with crosslinking agents and additives in specific proportions. This composite formulation provides synergistic effects that enhance chemical resistance to alkaline hydrogen peroxide water and improve the film's filling and planarization performance, while keeping the manufacturing process straightforward.

The patent optimizes the chemical composition parameters by selecting specific polymer compounds with controlled molecular weights and ratios, along with appropriate crosslinking agents. This parameter tuning enables the film to achieve high dry etching rates for selective removal while simultaneously maintaining excellent planarization and filling characteristics, as the polymer structure and crosslinking density are precisely controlled to balance etchability with surface quality.

The patent uses composite material formulation combining multiple polymer compounds (polyester 30-70 parts, polyacrylic acid 20-50 parts, polyacrylamide 10-30 parts) with crosslinking agents and additives. This composite approach provides synergistic effects that enable the film to achieve high dry etching rates while maintaining superior planarization and filling characteristics, as each component contributes specific properties that work together to balance etchability with surface quality.