Resist Underlayer Film Composition for EUV Adhesion and Fast Etching
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Solution Overview
Problem
Advanced semiconductor devices require a resist underlayer film with excellent EUV resist adhesivity and high etching processability, particularly in tri-layer processes, where the introduction of functional groups and photoacid generators for improved lithographic properties leads to slower etching rates.
Innovation Solution
A film-forming composition comprising a hydrolyzable silane with a crosslinkable group-containing silane, having an organic group with an amide or amino group, a hydroxy alkyl group, or an alkoxy alkyl group, which facilitates aminoplast crosslinking reactions and enhances EUV resist adhesivity and fluorine-based etching rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large amount of functional group having high adhesivity with resist and photoacid generator are introduced for better lithographic property, then EUV resist adhesivity is improved, but etching rate decreases
Solution Approach 1:
The invention changes the chemical parameters of the underlayer film by introducing specific silane compounds with amino groups that react with phenol groups in the resist. This chemical modification enables high adhesivity without requiring large amounts of conventional functional groups, thereby maintaining fast etching rates while achieving good EUV lithographic properties.
Solution Approach 2:
The invention uses composite material strategy by combining silane compounds with specific organic groups (amino, amide, carboxyl) in defined proportions. This composite approach creates an underlayer film that simultaneously provides chemical bonding for adhesivity and maintains etch selectivity, resolving the contradiction between stickiness and etching speed.
2Manufacturing precision
If resist films are made remarkably thinner for finer processing, then resolution is improved, but pattern collapse resistance deteriorates
Solution Approach 1:
The invention applies preliminary action by forming an underlayer film with specific chemical properties before applying the resist. The silane-based underlayer film is pre-treated to create optimal adhesion and mechanical support, enabling thinner resist films to maintain structural integrity and resist pattern collapse during processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition achieves a thin film with good EUV resist adhesivity and high etching processability, enabling the formation of fine resist patterns with high transferability to a base substrate.
Implementation Method 1
a composition comprising at least one kind selected from a hydrolyzable silane, a hydrolysis product thereof, and a hydrolysis condensate
Implementation Method 2
the hydrolyzable silane having a predetermined organic group containing an amide group or an amino group having a hydroxy alkyl group or an alkoxy alkyl group on a nitrogen atom
Data Source
AI summary
A film-forming composition suitable as a resist underlayer film-forming composition from which a resist underlayer film having not only a good EUV resist adhesivity but also a good etching processability due to a high fluorine-based etching rate.For example, a film-forming composition includes a polymer represented by Formula (E1) and a solvent.