Resist Underlayer Film Composition for EUV Pattern Uniformity

The patent uses a polymer containing both carboxyl groups and hydroxyl groups in specific proportions (0.1-10 mmol/g carboxyl, 0.01-1 mmol/g hydroxyl) to create a composite chemical structure. This composite polymer composition provides both strong adhesion to the substrate through carboxyl groups and resistance to resist film intermixing through the balanced hydroxyl content, resolving the contradiction between adhesion strength and compositional stability.

The patent changes the chemical composition parameters of the polymer, specifically controlling the carboxyl group content at 0.1-10 mmol/g and hydroxyl group content at 0.01-1 mmol/g. This parameter optimization enables the formation of uniform, defect-free thin films (5-50 nm thickness) suitable for EUV lithography, achieving both high pattern resolution and film reliability by preventing pinhole formation and aggregation through the optimized polymer structure.

The patent optimizes the polymer's functional group parameters (carboxyl: 0.1-10 mmol/g, hydroxyl: 0.01-1 mmol/g) to achieve the dual goal of high critical resolution and film uniformity. This precise parameter control allows the formation of ultra-thin films (5-50 nm) that maintain compositional homogeneity and prevent defects, enabling critical resolution sizes of 32 nm or less while preserving manufacturing precision.