Resist Underlayer Film Composition for Hard, Bend-Resistant Etching
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Solution Overview
Problem
There is a strong demand for resist underlayer films with high hardness and resistance to bending after spin-on-carbon etching in semiconductor production processes, as existing technologies do not adequately address the need for high film density and hardness.
Innovation Solution
A resist underlayer film-forming composition is developed using a polymer synthesized by reacting a glycoluril compound with an aromatic compound having a phenolic hydroxyl group, with specific substituents and a solvent, optionally including crosslinking agents, acids, and surfactants, to achieve high film density and hardness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional resist underlayer films are used, then the film can be formed with basic properties, but the film hardness is insufficient and the film bends after spin-on-carbon etching
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by using a polymer with specific repeating units containing glycoluril compounds and phenolic hydroxyl groups, achieving high film density and hardness while preventing bending during etching processes
Solution Approach 2:
The patent creates a composite polymer structure combining rigid framework monomers with thermally crosslinkable sites, achieving both high film density and etching resistance through the synergistic effect of the composite material structure
2Quantity of substance
If film density is increased to improve hardness, then higher stress resistance during etching is obtained, but the complexity of material synthesis increases
Solution Approach 1:
The patent optimizes the chemical parameters of the polymer, specifically using glycoluril compounds with phenolic hydroxyl groups and controlling the ratio of rigid framework monomers to thermally crosslinkable sites, achieving high film density through precise parameter selection rather than complex synthesis procedures
Solution Approach 2:
The patent uses established polymerization methods and known glycoluril compound structures, copying successful material design patterns from existing literature while achieving superior film density through specific molecular architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition forms a high-film-density resist underlayer film with enhanced hardness, suitable for diverse semiconductor processes, including etching and pattern formation.
Implementation Method 1
a polymer obtained by reacting a glycoluril compound with an aromatic compound having at least one phenolic hydroxyl group
Implementation Method 2
polymers are synthesized by polymerizing rigid and linear framework monomers in two dimensions (a planar structure), and additionally stacking them in three dimensions through π-π stacking and hydrogen bonding
Implementation Method 3
stacking them in three dimensions through π-π stacking and hydrogen bonding
Implementation Method 4
polymers containing hydroxyl groups with thermally crosslinkable sites are synthesized
Data Source
AI summary
[Problem] The purpose of the present invention is to provide: a resist underlayer film which is required to have resist underlayer film characteristics such as high density, high hardness and unbending properties after etching; a resist underlayer film forming composition which is capable of forming the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. [Solution] A resist underlayer film forming composition which contains a solvent and a polymer that is obtained by reacting a glycoluril compound with an aromatic compound having at least one phenolic hydroxyl group, wherein the nitrogen content ratio of the polymer is less than 10% by mass.