Resist Underlayer Composition for Low-Roughness EUV Patterning
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Solution Overview
Problem
Existing resist underlayer films experience intermixing with resist films and form patterns with high roughness, which is a challenge in the microfabrication of semiconductor devices, especially with advanced lithography techniques like EUV light and electron beams.
Innovation Solution
A resist underlayer film-forming composition containing a compound with a chain α,β-unsaturated carbonyl group and specific solvents, optionally with crosslinking agents and curing catalysts, is used to form a resist pattern with reduced roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional resist underlayer film-forming composition is used, then the resist underlayer film can be formed, but intermixing with the resist film occurs and pattern roughness increases
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film-forming composition by incorporating compounds with specific functional groups (epoxy groups, chain α,β-unsaturated carbonyl groups) and controlling the ratio of reactive groups. This chemical parameter modification prevents intermixing with the resist film while maintaining smooth pattern formation, directly resolving the contradiction between pattern roughness and resist film integrity.
Solution Approach 2:
The patent creates a composite resist underlayer film by combining multiple functional components: compounds with epoxy groups, compounds with chain α,β-unsaturated carbonyl groups, and crosslinking agents. This composite material structure provides both adhesion to the substrate and chemical compatibility with the resist film, preventing intermixing while ensuring smooth patterns.
2Reliability
If the resist underlayer film is made more adhesive to prevent intermixing, then resist film integrity is improved, but pattern roughness increases
Solution Approach 1:
The patent optimizes the chemical parameters by controlling the number and type of reactive groups in the underlayer film-forming composition. By using compounds with specific functional groups and controlled ratios, the film achieves sufficient adhesion without excessive crosslinking that would cause roughness, thus resolving the contradiction between resist film integrity and pattern smoothness.
Solution Approach 2:
The patent introduces local quality by having different regions of the underlayer film with different crosslinking densities. The crosslinking reaction creates a gradient structure where the film has sufficient adhesion at the substrate interface while maintaining smoother surfaces at the resist film interface, preventing both intermixing and excessive roughness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the formation of a resist pattern with small roughness, improving the microfabrication process by preventing intermixing and enhancing pattern quality.
Implementation Method 1
a compound (A) including a side chain or a terminal having a chain α,β-unsaturated carbonyl group
Data Source
AI summary
A resist underlayer film-forming composition, containing: a compound (A) including a side chain or a terminal having a chain α,β-unsaturated carbonyl group; and a solvent (B).