Resist Underlayer Composition for Void-Free Fine Pattern Filling
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Solution Overview
Problem
Conventional resist underlayer film-forming compositions struggle to embed fine patterns on miniaturized semiconductor substrates without voids, while also generating sublimates that contaminate equipment and cause defects, and they lack adequate protection against wet etching chemical solutions.
Innovation Solution
A resist underlayer film-forming composition comprising a compound with a theoretical molecular weight of 999 or less, containing a nitrogen-containing heterocyclic ring and specific organic groups, along with an organic solvent, which forms a film that can be embedded in fine patterns without voids and provides resistance to wet etching solutions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist underlayer film-forming compositions are used to embed fine patterns, then the film can be formed on miniaturized substrates, but voids are generated in the embedded film
Solution Approach 1:
The patent changes the molecular weight parameter of the polymer resin to 999 or less, which is significantly lower than conventional resins. This parameter change improves the composition's ability to penetrate and embed in fine patterns without generating voids, while maintaining film integrity and reliability
2Ease of manufacture
If conventional resist underlayer film-forming compositions are used, then film formation is achieved, but sublimates are generated during baking that contaminate equipment
Solution Approach 1:
The patent changes the molecular weight parameter of the polymer resin to 999 or less, which reduces the amount of sublimates generated during baking. This lower molecular weight composition maintains ease of film formation while significantly reducing equipment contamination from sublimates
Solution Approach 2:
The patent uses a small molecule compound (molecular weight 999 or less) that replicates the essential film-forming properties of conventional high molecular weight polymers without the harmful sublimation behavior. This copying approach achieves film formation functionality while eliminating the sublimate generation problem
3Productivity
If conventional resist underlayer films are used, then lithography process is completed, but protection against wet etching chemical solutions is insufficient
Solution Approach 1:
The patent creates a composite material system combining a specific polymer resin with molecular weight 999 or less and a crosslinking agent. This composite structure provides both the necessary lithography process functionality and enhanced protection against wet etching chemical solutions, improving reliability without sacrificing productivity
Data Source
AI summary
A composition contains an organic solvent and compound (formula (1)), theoretical molecular weight 999 or less. (Z1 contains a nitrogen-containing heterocyclic ring; U represents a monovalent organic group (formula (2)); and p represents 2 to 4.) (In formula (2), R1 represents an alkylene group having 1 to 4 carbon atoms; A1 to A3 represent a hydrogen atom, or methyl or ethyl group: X represents —COO—, —OCO—, —O—, —S— or —NRa—; Ra represents a hydrogen atom or methyl group; Y represents a direct bond or optionally substituted alkylene group having 1 to 4 carbon atoms; R2, R3 and R4 represent a hydrogen atom or optionally substituted alkyl group having 1 to 10 carbon atoms or aryl group having 6 to 40 carbon atoms; R5 represents a hydrogen atom or hydroxy group; n represents 0 or 1; m1 and m2 represent 0 or 1; and * represents a binding site to Z1.)