Resistance Change Memory Standby Leak Current Reduction

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Resistance change memory technologies face challenges in minimizing leak currents during standby states, leading to increased power consumption due to the presence of active transistors in leak paths between the power supply and ground potential.

Innovation Solution

The implementation of a resistance change memory design that configures at least two MOS transistors in an off state on each leak path between the power supply voltage terminal and the ground potential terminal, using specific signal control sequences to transition transistors into cutoff states during standby, thereby reducing leak currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If transistors are kept in on state to maintain circuit connectivity, then signal transmission is enabled, but leak current increases and power consumption rises

Engineering Contradiction:
Improvesignal transmission capabilityVSAvoidpower consumption
Core Design Contradiction:
Ease of operationVSLoss of energy

Solution Approach 1:

The patent implements dynamic transistor state control by introducing control signals (first control signal and second control signal) that transition transistors between on and off states based on operational requirements. During standby state, transistors are switched to off state to eliminate leak current, while during read/write operations, transistors are activated to enable signal transmission. This dynamic state change resolves the contradiction between maintaining connectivity and reducing power consumption.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent employs periodic switching of transistors between on and off states corresponding to different operational phases (standby, read, write). Control signals are periodically activated to transition transistors to on state during operations and back to off state during standby, creating a periodic action pattern that minimizes energy consumption while maintaining operational capability when needed.

Inventive Principle:
Principle #19Periodic action

2Loss of energy

If transistors are placed in off state to reduce leak current, then power consumption decreases, but circuit connectivity is interrupted

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit connectivity
Core Design Contradiction:
Loss of energyVSEase of operation

Solution Approach 1:

The patent uses dynamic control signals to switch transistors between off state (during standby to reduce power consumption) and on state (during read/write operations to restore connectivity). The control circuit activates transistors only when operational connectivity is required, thereby resolving the contradiction between power savings and circuit connectivity by making connectivity conditional rather than continuous.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent prepares transistors in off state during standby to minimize power consumption, and uses control signals to activate them in advance before read or write operations begin. This preliminary positioning of transistors in low-power state, with rapid activation capability, allows the system to maintain connectivity only when needed while preserving power savings during idle periods.

Inventive Principle:
Principle #10Preliminary action

3Loss of energy

If multiple transistors are placed in series on leak paths to reduce current, then leak current decreases, but device complexity increases

Engineering Contradiction:
Improveleak currentVSAvoidtransistor configuration
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent uses control signals to make transistors serve multiple functions: during standby state, transistors function as current blocking elements to reduce leak current; during operational states, the same transistors function as signal transmission switches. This multi-functionality allows the system to achieve low leak current without permanently increasing device complexity, as the transistor configuration adapts its function based on operational context rather than requiring separate dedicated components for each function.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS9443585B2Resistance change memory
Publication Date: 2016.09.13 KIOXIA CORP
  • US9443585B2 patent drawing
  • US9443585B2 patent drawing
  • US9443585B2 patent drawing

AI summary

According to one embodiment, a resistance change memory includes a first memory cell, a word line, a first bit line, first and second inverters, first to sixth MOS transistors, and a control circuit. The first transistor is connected to the first output terminal of the first inverter. The second transistor is connected to the second output terminal of the second inverter. The fifth transistor has a first current path whose one end is connected to the first voltage terminal of the first inverter. The sixth transistor has a second current path whose one end is connected to the third voltage terminal of the second inverter. The control circuit makes the first and second transistors a cutoff state by a first signal and makes the fifth and sixth transistors the cutoff state by a second signal in a standby state.