Nonvolatile Resistance Element with Anti-Diffusion Layer
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Solution Overview
Problem
The integration of nonvolatile resistance change elements with rectifying functions in cross-point memory structures is hindered by increased element size, leading to difficulties in power consumption and functionality due to sneak currents, which necessitate a compact and efficient solution that maintains device characteristics.
Innovation Solution
A nonvolatile resistance change element with a semiconductor-based structure, featuring a metal electrode, a semiconductor counterelectrode, and a resistance change layer with a conductor filament, where an anti-diffusion layer prevents filament diffusion, enabling reversible resistance switching and rectifying functionality without the need for additional diodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a nonvolatile resistance change element is integrated with a diode to provide rectifying function, then the rectifying function is achieved, but the element size increases making integration difficult
Solution Approach 1:
The patent combines the resistance change layer and diode into a single integrated structure where the resistance change layer is formed between the anode and cathode of the diode. This merging eliminates the need for separate components while achieving both rectifying function and resistance change functionality in one element, thereby reducing overall element size and improving integrability.
Solution Approach 2:
The resistance change layer serves multiple functions simultaneously: it provides the rectifying characteristic through its asymmetric conduction properties and enables nonvolatile resistance switching for memory storage. This multi-functionality allows a single component to replace what would traditionally require separate elements, reducing the overall device footprint.
2Productivity
If the conductive filament comes in direct contact with the semiconductor layer, then the switching mechanism is enabled, but chemical reactions at the interface change the Schottky characteristics and device characteristics vary
Solution Approach 1:
The patent introduces an intermediate layer between the conductive filament and the semiconductor layer that prevents direct contact. This intermediary layer acts as a barrier to chemical reactions and diffusion while still allowing the filament to grow sufficiently to enable switching. The intermediate layer stabilizes the Schottky characteristics by preventing degradation from direct metal-semiconductor interaction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces device characteristic variations, provides a rectifying function, and prevents sneak currents, allowing for efficient operation and integration in large-capacity memory devices while maintaining low power consumption.
Implementation Method 1
A conductive filament growing from the metal electrode is shortcircuited to the counterelectrode and restored in the metal electrode, thereby changing the resistance between the electrodes and achieving switching characteristics
Implementation Method 2
an anti-diffusion layer prevents filament diffusion
Data Source
AI summary
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode and a first layer. The first electrode includes a metal element. The second electrode includes an n-type semiconductor. The first layer is formed between the first electrode and the second electrode and includes a semiconductor element. The first layer includes a conductor portion made of the metal element. The conductor portion and the second electrode are spaced apart.