Resistive Memory Cell Temperature-Controlled Reading Method
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Solution Overview
Problem
Resistive memory cells face challenges in differentiating between low-resistive and high-resistive states at varying temperatures, leading to difficulties in accurately reading stored data due to changes in resistance values.
Innovation Solution
A resistive memory apparatus and reading method that utilize a thermoelectric device to adjust the temperature of resistive memory cells, applying read voltages at different temperatures to determine resistive states and accurately read storage data by comparing resistance values and temperature changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If temperature increases, then resistance of low-resistive state increases and resistance of high-resistive state decreases, but this causes difficulty in differentiating between the two resistive states
Solution Approach 1:
The patent applies periodic temperature variations to the resistive memory cell by controlling a heater circuit. Multiple read operations are performed at different temperature points (heating phase and cooling phase) to obtain resistance values that vary periodically with temperature. This periodic action allows differentiation of resistive states by analyzing the temperature-dependent resistance characteristics rather than relying on a single temperature measurement.
Solution Approach 2:
The patent changes the temperature parameter dynamically during the read operation. By varying temperature and measuring resistance at multiple temperature points, the system captures the distinct temperature coefficients of low-resistive and high-resistive states. This parameter change approach transforms the differentiation problem from a static resistance comparison to a dynamic temperature-resistance relationship analysis.
2Ease of operation
If single temperature read operation is used, then reading process is simple, but accurate reading of storage data cannot be achieved under varying temperatures
Solution Approach 1:
The patent performs multiple read operations in a periodic manner during a single read cycle - heating to a first temperature, reading resistance; cooling to a second temperature, reading resistance again. This periodic read action at different temperature points provides sufficient information to determine the resistive state reliably, maintaining operational simplicity while improving accuracy.
Solution Approach 2:
The system uses feedback from temperature-dependent resistance measurements to determine the resistive state. By comparing resistance values at different temperatures and analyzing their relationship, the system feedback-determines whether the cell is in low-resistive or high-resistive state, achieving reliable data reading without requiring complex external temperature control equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables correct reading of storage data by distinguishing between resistive states through temperature-controlled resistance measurements, effectively addressing the temperature-induced ambiguity in existing technologies.
Implementation Method 1
a thermoelectric device (220) to adjust a temperature of the resistive memory cell (214)
Data Source
Figure 1~2
Figure 3
AI summary
A resistive memory apparatus and a reading method thereof are provided. In this method, two reading pulses are applied to a resistive memory cell, such that a first reading resistance and a second reading resistance of the resistive memory cell at different temperatures are sequentially obtained. Next, a resistive state of the second reading resistance is determined according to the reading resistances and the temperatures corresponding to the reading resistances. Thereafter, a logic level of storage data of the resistive memory cell is determined according to the resistive state of the second reading resistance.