Resistive Memory Multi-Mode Write Current Control
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Solution Overview
Problem
Resistive memory devices face challenges in efficiently distinguishing and writing data to normal and weak memory cells, which affects their performance and power consumption.
Innovation Solution
The implementation of a resistive memory device with a control circuit that differentiates between normal and weak memory cells through a test operation, applying a first write current to normal cells and a second, higher write current to weak cells, allowing for multi-mode switching current operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single write current is used for all memory cells, then the device complexity is reduced, but weak memory cells cannot be properly written due to insufficient current
Solution Approach 1:
The patent applies preliminary action by performing a test operation before the actual write operation to identify weak memory cells. This preliminary classification allows the system to select appropriate write currents for different cell types, ensuring reliable writing while managing complexity through staged operations.
Solution Approach 2:
The patent implements local quality by applying different write currents (first write current for normal cells, second write current for weak cells) to different memory cells based on their individual characteristics. This localized approach ensures each cell receives the appropriate current level for reliable writing.
2Reliability
If a higher write current is applied to all memory cells to ensure weak cells are written, then write reliability is improved, but power consumption increases
Solution Approach 1:
The patent applies local quality by providing different write currents to different memory cells based on their characteristics. Normal memory cells receive a lower first write current while weak memory cells receive a higher second write current, optimizing power consumption by avoiding unnecessary high current application to all cells.
Solution Approach 2:
The patent implements parameter changes by adjusting the write current parameter based on memory cell type. The system changes the current parameter from a single fixed value to multiple values (first and second write currents) selected based on test operation results, optimizing both reliability and power consumption.
Data Source
AI summary
A method of writing data in a resistive memory device includes performing a test operation to distinguish normal memory cells from weak memory cells, during a write operation directed to normal memory cells using a write current and during a weak write operation directed to weak memory cells using a higher write current.