Resonant Gate Driver Layout Using Parasitic Inductance

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Solution Overview

Problem

The integration of inductance as a chip component increases component count and cost, while integrating it on a semiconductor substrate as spiral inductance leads to high DC resistance and degraded performance in resonant gate driver circuits.

Innovation Solution

A resonant gate driver circuit is integrated on a semiconductor substrate with a parasitic inductance used as the resonant inductance, eliminating the need for external components and reducing DC resistance by arranging output nodes at maximum distance and using parasitic inductance occurring in coupling means such as wiring or bonding wires.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If inductance is configured as a chip component, then the resonant gate driver circuit can be implemented, but the number of components increases resulting in increased cost

Engineering Contradiction:
Improveresonant gate driver circuit functionalityVSAvoidnumber of components
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the resonant inductor function into the existing chip substrate by utilizing the parasitic inductance of the coupling wiring between output nodes. This eliminates the need for a separate inductor chip component while maintaining the resonant circuit functionality, thereby reducing component count and cost without sacrificing circuit performance

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent converts the harmful parasitic inductance of the coupling wiring into a beneficial resonant inductor. By intentionally utilizing the parasitic inductance that naturally occurs in the wiring structure, the patent eliminates the need for additional components while achieving the desired resonant behavior for high-frequency switching

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Device complexity

If inductance is integrated on a semiconductor substrate as spiral inductance, then the number of components is reduced, but the DC resistance value increases resulting in degraded performance

Engineering Contradiction:
Improvenumber of componentsVSAvoidperformance
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent merges the inductor function with the existing coupling wiring structure rather than adding a separate spiral inductance element. This approach reduces component count while avoiding the high DC resistance associated with traditional spiral inductors, as the inductance is derived from the necessary coupling wiring itself

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent converts the parasitic inductance of the coupling wiring, which is typically considered a harmful effect, into a beneficial resonant inductor. This eliminates the need for additional inductance elements that would introduce high DC resistance, thereby maintaining low resistance while achieving the required inductance for resonant operation

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration reduces the need for external components, lowers DC resistance, and enhances performance by utilizing parasitic inductance as the resonant inductance, thereby improving the efficiency and cost-effectiveness of the resonant gate driver circuit.

Implementation Method 1

The resonant inductor is structured as a parasitic inductance that occurs in a coupling means that electrically couples the first output node and the second output node

Methodology Applied
Scientific EffectParasitic inductance: Parasitic Capacitance

Implementation Method 2

a resonant driving method has been proposed. With such a resonant driving method using LC resonance, it is possible to switch a power transistor at a high frequency with low power consumption

Methodology Applied
Scientific EffectLC resonance: Resonance

Data Source

PatentUS11811405B2Resonant gate driver circuit
Publication Date: 2023.11.07 ROHM CO LTD
  • US11811405B2 patent drawing
  • US11811405B2 patent drawing
  • US11811405B2 patent drawing

AI summary

A resonant gate driver 200A includes an H-bridge circuit and a resonant inductor integrated on a semiconductor substrate. A first leg of the H-bridge circuit includes a first high-side transistor, a first output node, and a first low-side transistor such that they are arranged side-by-side in a first direction (x direction) in a first region defined along a first side. The second leg of the H-bridge circuit includes a second high-side transistor, a second output node, and a second low-side transistor such that they are arranged side-by-side in a first direction (x direction) in a second region defined along a second side. A resonant inductor is a parasitic inductance that occurs in a coupling means that electrically couples the first output node and the second output node.