RF Resistor Element Harmonic Reduction via Modified Semiconductor Region
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Solution Overview
Problem
Radio frequency switches used in cellular phones generate harmonics due to non-linear behavior, which affects signal quality by emitting or inducing unwanted signals.
Innovation Solution
A radio frequency resistor element comprising a resistive polysilicon trace located above isolation components laterally surrounded by modified semiconductor regions with a higher charge carrier recombination rate than the semiconductor substrate, reducing harmonic generation by creating depletion zones and increasing recombination centers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a radio frequency switch is used to enable operation at multiple frequencies, then the device functionality is improved, but harmonic generation increases due to non-linear behavior
Solution Approach 1:
The patent introduces a resistive polysilicon trace that deliberately generates harmonics through its non-linear resistance characteristics. This controlled harmonic generation compensates for the unwanted harmonics produced by the radio frequency switch, effectively canceling them out and improving overall signal linearity while maintaining multi-frequency operation capability
2Object-generated harmful factors
If a resistive polysilicon trace is added to reduce harmonics, then harmonic generation is reduced, but device complexity increases
Solution Approach 1:
The resistive polysilicon trace is integrated directly into the existing radio frequency switch structure, sharing the same semiconductor substrate and physical space. This merging approach allows the harmonic compensation function to be added without requiring separate discrete components, thereby minimizing the increase in device complexity while effectively reducing harmonic generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces harmonic generation in radio frequency switches, improving signal linearity and reducing parasitic capacitance, as demonstrated by measurements showing lower harmonic power in on and off states compared to standard chips.
Implementation Method 1
The modified semiconductor region has a higher charge carrier recombination rate than the semiconductor substrate located below the isolation component
Data Source
AI summary
A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.