Ring-Shaped Electrode Structure for Higher Capacitance and Yield

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Solution Overview

Problem

The complexity of manufacturing and integration in semiconductor devices leads to deficiencies, necessitating an improvement in the manufacturing process to enhance device performance and yield.

Innovation Solution

A semiconductor device design featuring a ring-shaped top electrode with a bottom electrode structure and insulating layers, where the first bottom electrode layer extends over the second bottom electrode layer, and insulating portions are used to increase the surface area and structural strength, allowing for improved capacitance and device performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional manufacturing processes are used for semiconductor devices, then the manufacturing complexity is manageable, but the device performance and yield rate are insufficient

Engineering Contradiction:

Improvedevice performance and yield rateVSAvoidmanufacturing complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The bottom electrode is divided into multiple layers (first bottom electrode layer and second bottom electrode layer) with insulating portions between them, creating a segmented structure that increases surface area while maintaining manufacturability through standardized layering processes

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The electrode structure transitions from a conventional planar configuration to a three-dimensional multi-layer architecture with vertical stacking, increasing the effective surface area of electrode plates without expanding the lateral footprint of the device

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If the electrode surface area is increased to improve device performance, then the capacitance or electrical performance improves, but the manufacturing precision requirements increase

Engineering Contradiction:

Improvedevice performanceVSAvoidmanufacturing precision

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The bottom electrode is segmented into multiple layers with insulating portions, allowing the total surface area to be distributed across multiple manufacturable layers rather than requiring a single large-precision layer

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first bottom electrode layer extends beyond the second bottom electrode layer in certain regions, creating overlapping areas that increase effective surface area while providing manufacturing tolerance compensation

Inventive Principle:

Principle #16Partial or excessive action

Data Source

PatentUS20230420488A1Semiconductor device with ring-shaped electrode and method for preparing the same

Publication Date: 2023.12.28 NAN YA TECH

AI summary

A semiconductor device includes a bottom electrode structure disposed over a semiconductor substrate. The bottom electrode structure includes a first bottom electrode layer, and a second bottom electrode layer surrounding the first bottom electrode layer. The semiconductor device also includes a plurality of insulating portions laterally separating the first bottom electrode layer and the second first bottom electrode layer. The semiconductor device further includes a top electrode disposed over and surrounded by the bottom electrode to structure. The top electrode has a ring shape from a top view. In addition, the semiconductor device includes an insulating layer separating the top electrode from the bottom electrode structure.