Ring Oscillator Bias Circuit for Temperature-Stable Low-Power Frequency
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Solution Overview
Problem
Current low-power voltage controlled oscillators, such as current-starved oscillators, exhibit a negative temperature gradient, causing the oscillation frequency to decrease with rising temperature, which cannot be effectively trimmed off-chip, posing a challenge for temperature stability in digital and smart phone circuits.
Innovation Solution
A ring oscillator device with a bias circuit using a current source with a main n-type metal-oxide semiconductor transistor, providing a control current proportional to a temperature-independent reference voltage and a gate-source voltage with a negative temperature coefficient, which compensates for temperature-dependent frequency drifts, ensuring temperature stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a current-starved oscillator is used to achieve low power consumption, then power consumption is reduced, but temperature stability deteriorates due to negative temperature gradient
Solution Approach 1:
The patent converts the harmful negative temperature coefficient of the oscillation frequency into a beneficial feature by using a current source with positive temperature coefficient to compensate for it. The main NMOS transistor's gate-source voltage has negative temperature coefficient, which when used in the current source creates a positive temperature coefficient current that compensates the oscillation frequency drift, thereby improving temperature stability while maintaining low power consumption
Solution Approach 2:
The patent changes the temperature coefficient parameter of the control current from negative to positive by utilizing the negative temperature coefficient of the NMOS transistor's gate-source voltage. This parameter change enables the current source to provide compensation current that counteracts the temperature-dependent frequency drift, resolving the temperature stability issue
2Use of energy by moving object
If current-starved delay elements are used to reduce operation current, then operation current is reduced, but frequency stability deteriorates due to temperature effects
Solution Approach 1:
The patent implements a feedback mechanism where the bias circuit continuously monitors and adjusts the control current based on temperature variations. The main NMOS transistor's temperature-dependent gate-source voltage provides automatic feedback that modulates the current source output, creating a compensating effect that maintains frequency stability despite temperature changes and low operation current
3Reliability
If MOS transistor mobility decreases with increasing temperature, then transistor resistance increases, but oscillation frequency drops due to negative temperature gradient
Solution Approach 1:
The patent applies a counterweight approach by introducing a control current with positive temperature coefficient that opposes and compensates for the negative temperature gradient effect. The main NMOS transistor's temperature-dependent characteristics are harnessed to generate this compensating current, which counteracts the frequency drop caused by increased transistor resistance at higher temperatures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a temperature-stable oscillation frequency with low operation current, eliminating the need for a level shifter and allowing for a wide output swing, thus addressing the temperature instability issue in current-starved oscillators.
Implementation Method 1
the gate-source voltage of the main NMOS-transistor comprises a negative temperature coefficient
Data Source
AI summary
In an embodiment an oscillator device includes a ring oscillator circuit with at least one delay stage with an output of a last delay stage fed back to an input of a first delay stage, wherein each of the delay stages is configured to receive a charging current and to provide a delay that is dependent on the charging current and at least one of the delay stages includes a metal-oxide-semiconductor field-effect transistor and a bias circuit including an output terminal coupled to an input terminal of the ring oscillator circuit, wherein the bias circuit is configured to receive a temperature-independent reference voltage and includes a current source with a main NMOS-transistor, the current source configured to provide a control current to the ring oscillator circuit which is proportional to a difference of the temperature-independent reference voltage and a gate-source voltage of the main NMOS-transistor, and wherein the gate-source voltage of the main NMOS-transistor includes a negative temperature coefficient.


