A ring oscillator starts at a lower frequency for reliable oscillation, then switches higher to overcome startup failure and frequency limits.
A switched discharge path detects capacitance transients and clears parasitic charge, raising relaxation oscillator sampling frequency.
Multiple oscillators with different switching characteristics detect process corners and calibrate drive signals against PVT variation.
Two differential VCOs split the input range to keep ADC conversion small, fast, and accurate across the full voltage span.
A ramp-driven open-loop ring oscillator spreads clock noise to cut charge pump EMI without a reference clock or PLL complexity.
Variable digital-code steps at cliff values keep output attributes within tolerance and shorten integrated-circuit tuning time.
A bias and temperature-compensation circuit stabilizes ring oscillator frequency across supply and temperature changes in small IC layouts.
A shared bias and temperature compensation path cancels threshold-voltage and reference-current drift to keep oscillator frequency stable at low power.
A shared time-division band-pass filter cuts VAD chip area and power use while improving central frequency accuracy in IoT voice detection.
Stage-distributed oscillator node connections cut parasitic capacitance while preserving phase noise, symmetry, and linearity for accurate time digitization.
A resonant pump-capacitor circuit generates sinewave voltage beyond supply limits without high-voltage silicon or discrete transformers.
Current mirroring and switching modules cut short-current loss in low-frequency relaxation oscillators while preserving sharp clock edges.
Unused programmable logic is periodically switched with ring oscillators to spread transistor aging more evenly and reduce performance disparity.
Multiple cascaded Vernier stages cut ring-oscillator cycles to achieve sub-10 ps TDC resolution with lower timing jitter and faster conversion.
Closed-loop oscillator measurements calibrate on-chip signal delays to verify setup and hold timing under PVT variation.
Thermometer Code conversion and encoder correction suppress metastability and setup-time errors in time-to-digital measurements.
Separate clock buffer paths keep sharp edges for duty ratio calculation while preserving low-EMI external output without extra terminals.
Periodic ring-oscillator pull-down on the wordline cuts GIDL leakage in thin-oxide memory transistors, improving cell reliability.
A self-aligned control circuit realigns ring oscillator phase to cut PLL phase noise and stabilize frequency under PVT variation.
A biasing circuit and current injection scheme stabilize ring oscillator frequency across temperature while reducing start/stop transients.
Integrated startup level setting and switching reduce clock jitter and temperature sensitivity without adding separate compensation blocks.
Ring oscillator counts and degradation modeling let a processor raise Vmin only as aging shifts occur, improving reliability without a fixed power guardband.
Complementary short switches equalize capacitor potential off-state, cutting discharge and settling time for faster touch-sensing frequency stabilization.
Cyclic path switching equalizes two delay chains to offset CMOS mismatch and improve true random number clock randomness.
Schmitt trigger delay cells and a non-overlap buffer cut quiescent current while preserving fast clock edges for ultra-low-power timing.
Biasing ring oscillator inverters near the temperature inversion zone improves frequency accuracy while keeping current consumption low across voltage and temperature changes.
Differential clock generation and duty cycle feedback keep memory self-test timing accurate while reducing reliance on costly ATE.
A disturb signal creates a brief frequency offset between coupled VCOs, preventing locking and reducing ADC code errors and noise.
Different clock durations and mixed transistor channel lengths cut flip-flop settling time without raising power use or area.
An internal realignment circuit shifts ring oscillator phase through a delay chain to curb PVT-driven phase noise and frequency drift in PLLs.
Multiplexer-controlled pull-up and pull-down selection prevents crossbar current, reducing jitter and non-linearity in phase interpolation.
Periodic row address counting and filtering isolate true aggressor rows, enabling victim-row refresh to prevent row hammer data loss.
An op-amp bias circuit with a switched-capacitor resistor holds CMOS delay stable across process, voltage, and temperature changes.
A counter-based clock synthesizer replaces PLL complexity to align display refresh clocks with system heartbeat timing and reduce visual artifacts.
Ring oscillators detect P- and N-device process corners in SRAM and periphery, enabling read/write assist compensation without array changes.
Switching off a local reference clock isolates a faulty bus interface without shutting down healthy links or degrading signal integrity.
An injection-locked VCO aligns clock transitions to data pulses, cutting recovery noise while supporting wider bandwidth with simpler circuitry.
Comparator timing and time-to-digital control let this oscillation circuit lock high-frequency clocks quickly without an external reference.
A bias current with positive temperature coefficient offsets ring oscillator frequency drift, keeping low-power operation stable across temperature.
Multiple on-chip oscillators at different locations capture device, parasitic, and voltage variation for more accurate chip performance monitoring.
PTAT control, a PMOS diode array, and MCU learning stabilize a low-power timebase clock across voltage, temperature, and process variation.
A pulse-controlled delay chain reuses limited delay elements to extend delay range while cutting leakage, area, and variation.
A multi-stage LC ring oscillator uses capacitive coupling and SOI MOS devices to deliver multi-phase RF signals with lower phase noise and power.
AC coupling capacitors and switches inject a differential start-up voltage to cut ring oscillator start-up failure, power use, and area.
A tristate-controlled load and driver circuit adapts voltage drops and signal levels to meet multiple interface common-mode requirements.
Voltage boosting and substrate bias control help this oscillator transmitter cut startup time and power at low supply voltage.
A transformer-coupled source voltage swing helps oscillators start in small signal mode, lower phase noise, and support frequency adjustment.
A CMOS-compatible floating-gate current-starved ring oscillator enables power-free radiation sensing and silicon aging readout through frequency shifts.
A feedback element and current compensator stabilize ring oscillator frequency against parasitic capacitance, voltage, and temperature drift.
An op-amp bias generator with resistive and matched nMOS modules stabilizes CMOS delay and frequency against PVT variation.