Ring-Shaped Magnetoresistive Memory for Spin-Orbit Writing
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Solution Overview
Problem
Existing magnetic memory devices using magneto-resistive effect elements face challenges in efficient data writing methods, particularly with spin-orbit torque, which require improvements for enhanced performance and reliability.
Innovation Solution
A magnetic memory device configuration incorporating a first interconnect, a first insulator, a second interconnect, and a ring-shaped first magneto-resistive effect element with specific ferromagnetic and nonmagnetic materials, utilizing spin-orbit torque for data storage, and a switching element to control current flow to the magneto-resistive effect element.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If spin-orbit torque is used for writing data to magneto-resistive effect elements, then data storage capability is improved, but writing efficiency and reliability are insufficient
Solution Approach 1:
The magneto-resistive effect element is divided into a storage layer and a reference layer with different magnetization directions. The storage layer is further segmented into multiple sub-layers with alternating magnetization orientations, enabling independent control and more reliable data storage while improving writing efficiency through selective manipulation of specific layers.
Solution Approach 2:
The patent utilizes voltage-controlled magnetic anisotropy to change the magnetization direction of the storage layer by applying specific voltages. This parameter change approach allows for efficient and reliable data writing by transitioning between parallel and anti-parallel magnetization states without requiring high current densities, thereby improving both writing efficiency and reliability.
2Duration of action of stationary object
If magneto-resistive effect elements are used as memory elements, then non-volatile storage is achieved, but the writing method requires improvement for enhanced performance
Solution Approach 1:
The patent implements dynamic control of magnetization states through voltage application. The storage layer can be switched between stable parallel and anti-parallel magnetization states dynamically, allowing for reliable write operations while maintaining non-volatile storage. The dynamic switching capability enhances write operation reliability without compromising data retention duration.
Solution Approach 2:
A switching element is introduced as an intermediary between the write current source and the magneto-resistive effect element. This intermediary controls the current flow precisely, ensuring that write operations are performed reliably only when needed, thereby improving write operation reliability while maintaining the non-volatile storage characteristic.
3Productivity
If ring-shaped magneto-resistive effect element is used around the interconnect, then spin-orbit torque efficiency is improved, but device structure becomes more complex
Solution Approach 1:
The magneto-resistive effect element is designed as a ring shape that is nested around the interconnect structure. This nesting arrangement allows the write current to flow through the interconnect and generate spin-orbit torque that directly acts on the storage layer, significantly improving data writing speed. The ring structure integrates seamlessly with the existing interconnect, minimizing additional structural complexity.
Solution Approach 2:
The patent transitions from a planar magneto-resistive effect element to a three-dimensional ring structure that wraps around the interconnect. This dimensional change enables more efficient spin-orbit torque generation and transfer, improving data writing speed while the ring geometry naturally integrates with the vertical interconnect structure, reducing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances data writing efficiency and reliability by leveraging spin-orbit torque for resistance change in the magneto-resistive effect element, improving the performance of magnetic memory devices.
Implementation Method 1
a writing method using spin-orbit torque is known
Implementation Method 2
Magnetic memory devices in which magneto-resistive effect elements are used as memory elements
Data Source
AI summary
A first interconnect and the first insulator extend in a first direction. A second insulator extends in the second direction and penetrates the first interconnect and the first insulator. A second interconnect is provided around the second insulator, extends in the second direction, and penetrates the first interconnect and the first insulator. A first magneto-resistive effect element is provided in a ring-shape around the second interconnect between the first interconnect and the second interconnect, and includes a first ferromagnetic material between the second interconnect and the first interconnect, a first nonmagnetic material between the first ferromagnetic material and the first interconnect, and a second ferromagnetic material between the first nonmagnetic material and the first interconnect.