Rotatable Gas Injector for Wafer Film Uniformity Control

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Solution Overview

Problem

The existing batch-type substrate processing apparatus has limitations in controlling the in-plane distribution of film characteristics on substrates due to a fixed injector, resulting in inconsistent gas discharge directions.

Innovation Solution

A substrate processing method involving a rotatable injector with gas holes along its vertical axis, allowing for controlled gas supply direction changes during processing operations to enhance in-plane distribution control.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the injector is fixed to the processing container, then the structure is simple and stable, but the in-plane distribution of film characteristics cannot be sufficiently controlled

Engineering Contradiction:
Improvein-plane distribution of film characteristicsVSAvoidinjector structure complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The injector is made rotatable around the vertical axis instead of being fixed, allowing the gas discharge direction to be dynamically adjusted during different process operations. This dynamic capability enables control of in-plane distribution of film characteristics while maintaining structural simplicity through a single rotational degree of freedom.

Inventive Principle:
Principle #15Dynamics

2Manufacturing precision

If the gas discharge direction is constant, then the injector structure is simple, but the in-plane distribution control is insufficient

Engineering Contradiction:
Improvein-plane distribution controlVSAvoidgas discharge direction adjustment
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The injector transitions from a static configuration with constant gas discharge direction to a dynamic configuration that can rotate around the vertical axis. This enables the gas discharge direction to be adjusted adaptively according to different process requirements, improving in-plane distribution control without excessive complexity.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS12054828B2Substrate processing method and substrate processing apparatus
Publication Date: 2024.08.06 TOKYO ELECTRON LTD
  • US12054828B2 patent drawing
  • US12054828B2 patent drawing
  • US12054828B2 patent drawing

AI summary

A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.