Rotating Ceramic Pipe for Plasma Processing Heat Management
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing plasma processing techniques face challenges in achieving fast and stable high-temperature thermal processing near a substrate surface due to damage from high-frequency power, leading to delayed processing speeds and reduced substrate throughput.
Innovation Solution
A plasma processing apparatus with a dielectric member surrounding an elongated annular chamber, featuring a cylindrical ceramic pipe that rotates to distribute heat and cool surfaces quickly, allowing for increased high-frequency power application without damaging the dielectric member, enabling efficient and stable plasma generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high-frequency power is excessively increased to increase plasma emitting intensity, then plasma intensity is improved, but the plasma source is damaged by heat
Solution Approach 1:
A dielectric member is introduced as an intermediary between the high-frequency power source and the plasma generation region. This dielectric member distributes the high-frequency power more evenly, preventing localized overheating while maintaining high plasma intensity. The dielectric member acts as a mediator that allows high power transmission without direct thermal damage to the plasma source components.
Solution Approach 2:
The patent replaces the conventional direct electromagnetic coupling system with a dielectric-mediated system. Instead of directly applying high-frequency electromagnetic fields to the plasma source, the dielectric member transforms the power transmission mechanism, distributing energy more uniformly and reducing thermal concentration that leads to damage.
2Reliability
If high-frequency power is suppressed to protect the plasma source, then plasma source durability is improved, but processing speed is delayed
Solution Approach 1:
The dielectric member enables the system to maintain high processing speeds by efficiently transmitting high-frequency power while distributing it to prevent damage. This intermediary component allows the system to operate at higher power levels continuously, improving throughput without sacrificing source longevity.
Solution Approach 2:
The introduction of the dielectric member changes the power distribution parameters within the plasma source, allowing operation at higher power levels. This parameter change enables simultaneous achievement of high processing speed and source durability by optimizing the electromagnetic field distribution.
3Productivity
If high-frequency power is increased to perform fast processing, then processing speed is improved, but the dielectric member is damaged by heat
Solution Approach 1:
A second dielectric member is introduced as an intermediary between the plasma generation region and the substrate mounting table. This additional dielectric member protects the original dielectric member from direct thermal exposure by distributing heat more evenly and providing an additional thermal barrier, enabling sustained high-power operation.
Solution Approach 2:
The patent implements thermal cushioning by positioning the dielectric member between the plasma generation region and the substrate mounting table. This dielectric member serves as a thermal buffer that protects upstream components from heat damage before the heat can propagate, allowing higher power operation without compromising component durability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for fast and stable plasma processing by preventing dielectric member damage, enabling higher processing speeds and increased plasma intensity, thus improving the efficiency of high-temperature thermal processing and low-temperature plasma processing with reactive gases.
Implementation Method 1
a dielectric member surrounding an elongated and annular chamber except for an opening portion and communicates with the opening portion
Implementation Method 2
a plasma generating region surrounded with a dielectric member; a coil arranged in the plasma generating region
Data Source
AI summary
In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the elongated chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. A rotating ceramic pipe having a cylindrical shape is provided so as to cause a refrigerant to flow into a cavity formed inside the ceramic pipe. Accordingly, it becomes possible to apply greater high-frequency power, thereby enabling fast plasma processing.