Electric Discharge Tubes TRIZ Cases

Segmented magnetic fields confine electrons while minimizing charging damage, enabling high-density plasma generation at low pressures.

A glow discharge plasma apparatus controls AC energizing voltage to manage displacement current and prevent filament formation.

Suspended magnets in cylindrical post cathodes steer arcs via fluid actuation to resolve unpredictable coating density and distribution.

Buried metal plate electrodes in a dielectric body adjust to ground potential, resolving plasma non-uniformity and adhesive peeling stress.

A control method measures electrode potential during plasma processing to estimate residual electric charges on an electrostatic chuck.

Integrates mechanical and electrical connections into a single connector interface for surgical instrument support arms.

Imaging device detects plasma emission intensity from gas supply holes to identify abnormal discharge or flickering states.

Hydrogen reacts with insulating by-products to prevent arcing and extend ion source lifetime.

Offset RJ45 jacks and staggered MRJ21 connectors compress the cassette footprint while maintaining 10 GbE connectivity.

Pulsated microwaves control ultraviolet light-emission from OH radicals, reducing plasma damage while maintaining oxidation rates.

A substrate processing apparatus moves a heater-equipped mounting table to suppress particle generation during semiconductor film formation.

An integrated lamellae extraction station automates specimen preparation using a computer-controlled FIB and plucker mechanism.

A vapor deposition apparatus uses a plasma generator to convert raw material gas into radical form for thin film formation.

A waterproof connector uses a metal mid-plate with shaped portions to block water entry while maintaining thin thickness.

A flowable silicon oxide layer fills high aspect ratio trenches using a cyclic to aliphatic precursor ratio of at least 2:1.

Nested slit discs distribute thermal load across zones, enabling accurate power density measurement for beams exceeding 30 kW.

Common control signals drive individual and common lenses, achieving focal length uniformity better than 0.05% while reducing system complexity.

An intermittent pulsed electron beam detects emission electron time changes to set scanning electron microscope observation conditions.

Temporary reference marks enable precise drift correction while preventing image quality degradation from residual exposure losses.

A Class D amplifier arrangement minimizes inductance by forming the current path directly in the substrate, reducing parasitic oscillations.

A high voltage power cable with an overmolded probe transfers energy to non-thermal plasma generators using epoxy insulation and gasket seals.

An inserted body absorbs excess power to flatten plasma density gradients, avoiding longitudinal magnetic field interference.

Dual dielectric blocks adjust local plasma field parameters to correct non-uniformities across semiconductor wafers during dry etching.

A chlorine plasma biases etchants to form cobalt chloride on the film surface.

Sequential oxidation and etching stages remove complex residues from plasma processing components, enabling component reuse.

Isolating grooves from supply holes prevents abnormal discharge, ensuring stable electrostatic attraction and uniform processing temperatures.

A baffle plate assembly uses a ring and support members to hold the plate between showerhead plates without welding.

A substrate processing method sets temperature to form a reaction layer before energy application removes the layer from the surface.

Phosphorus fluoride dopant sources replace phosphine in ion implantation systems to deliver precise doping profiles.

A mounting table uses a high conductivity heat transfer body to move thermal energy from the ceramic substrate to an external sensor.

A movable electron column adjusts beam path length to minimize gas scattering, enabling high-signal imaging of untreated biological samples at room temperature.

A chip assembly uses a frictional seal member to secure plug and base components in a fluid-tight connection.

A coaxial waveguide plasma source uses a surrounding linear magnetic circuit to maintain electron cyclotron resonance conditions.

A rotating ceramic pipe cools dielectric members, preventing heat damage during high-power plasma generation.

Chlorine and oxygen plasma etches boron-doped amorphous carbon masks at 100°C or higher, reducing line edge roughness and improving aspect ratios.

An automated dose-correction recipe generation system integrates reticle, slit, process, and wafer data to control exposure doses.

A processing chamber uses remote and direct plasma sources to generate ions and radicals for cyclic substrate etching.

A stoichiometrically pure capping layer deposition method using sputtering techniques to minimize defects in EUV optical elements.

Virtual TEM images automate defect classification, eliminating human interpretation errors in semiconductor analysis.

Segmenting the container body from interchangeable covers resolves sealing versus adaptability trade-offs while lowering examination costs.

Air gaps between copper wirings reduce permittivity for faster signals, while diffusion barriers prevent copper migration during etching.

Segmented manipulators correct mechanical misalignments and thermal expansion to maintain precise ion beam uniformity.

Conductive spacers act as resistance heaters in a wafer boat, eliminating slow heating delays of inner plates while maintaining plasma generation.

Intermittent high-frequency power supply with hydrogen bromide and oxygen gas improves mask selectivity during poly silicon etching.

Sub-atmospheric pipe pressure reduces ozone stay-time, preserving concentration and preventing electrode charging in charged particle beam drawing systems.

Iodine forms protective substances that suppress lateral etching under the mask while maintaining high verticality during deep processing.

GCIB-deposited phosphorus getters metal impurities from ultra-low-k dielectrics, preventing line-to-line breakdown while maintaining low capacitance.

Adjusting the nitrogen hydrogen ratio in a remote plasma deposits dielectric films that fill narrow gaps without creating voids or seams.

A controller corrects microwave waveforms using frequency spectra to stabilize plasma conditions in processing apparatuses.