Substrate Processing Apparatus Particle Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The generation of particles in the process chamber during semiconductor device manufacturing, caused by deposits on chamber members, leads to reduced film quality due to foreign materials and quality control issues.
Innovation Solution
A technique involving a substrate processing apparatus where the substrate is supported by a heater-equipped mounting table, with specific gas supply and positioning strategies to minimize particle generation, including a modification process to convert deposits into a strong, high-density substance using reactive gases like O2, and a cleaning process using F2 gas to remove accumulated deposits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate is processed in the process chamber using processing gas, then film forming is achieved, but deposits are attached onto members in the process chamber causing particles and reducing film quality
Solution Approach 1:
The mounting table is moved to a higher position (second position) before the film forming process to prevent deposit accumulation on chamber members. This preliminary positioning action prevents the harmful effect of particle generation before it occurs during substrate processing
Solution Approach 2:
The heater on the mounting table is utilized to heat the ceiling portion of the process chamber during reactive gas supply. This converts the heating function into a beneficial tool for modifying deposits and converting them into stable substances that are less likely to generate particles
2Manufacturing precision
If the heater is turned on continuously to maintain substrate temperature, then film forming quality is improved, but energy consumption increases
Solution Approach 1:
The heater operation is made periodic rather than continuous. The heater is turned on during reactive gas supply to modify deposits, and turned off during substrate processing when temperature maintenance is sufficient. This periodic operation reduces energy consumption while maintaining film forming quality
Solution Approach 2:
The heater control is dynamically adjusted based on the mounting table position and process stage. The heater operates at different power levels or states depending on whether the table is in the first or second position, optimizing energy usage according to actual process needs
3Object-generated harmful factors
If cleaning is performed frequently to remove deposits, then particle generation is suppressed, but productivity decreases due to process interruption
Solution Approach 1:
The mounting table position is adjusted preliminarily to prevent deposit accumulation that would require frequent cleaning. By positioning the table higher before processing, the need for frequent cleaning is reduced, thereby maintaining productivity
Solution Approach 2:
Deposits are converted into stable substances through reactive gas supply and heating, transforming the harmful deposits into beneficial protective layers. This conversion reduces the frequency and intensity of cleaning required, maintaining both particle suppression and productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses particle generation, improves film forming quality, reduces cleaning frequency, and maintains equipment safety and cost-effectiveness by converting deposits into stable substances that are less likely to peel and fall, thereby enhancing operational efficiency.
Implementation Method 1
the heater is turned on
Implementation Method 2
supplying a reactive gas into the process chamber... converting deposits into a strong, high-density substance
Implementation Method 3
cleaning process using F2 gas to remove accumulated deposits
Implementation Method 4
forming a film on the substrate by supplying a processing gas into the process chamber
Data Source
AI summary
A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position.