Substrate Processing Temperature Control for SiO2 Etching Precision
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current substrate processing methods lack the precision and efficiency in controlling pattern shape changes on wafers, particularly in forming and removing reaction layers for accurate etching of SiO2 films, as they are influenced by temperature variations and iso-dense structures.
Innovation Solution
A substrate processing method involving setting a specific temperature to form a reaction layer of predetermined thickness, followed by energy application to remove the layer, using a combination of plasma processing and heating to control the etching process, allowing for precise control of pattern changes and etching rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate temperature is increased to accelerate reaction layer formation, then the etching rate increases, but the pattern shape control precision deteriorates due to excessive pattern change
Solution Approach 1:
The patent applies parameter changes by precisely controlling the substrate temperature during reaction layer formation. By optimizing the temperature parameter within a specific range, the method achieves both sufficient reaction layer formation rate and acceptable pattern shape control, resolving the contradiction between productivity and precision
Solution Approach 2:
The patent applies preliminary action by forming a reaction layer with controlled thickness before the etching process. This preliminary reaction layer formation at optimized temperature ensures that subsequent etching proceeds uniformly without causing excessive pattern change, thus maintaining precision while achieving desired etching rate
2Manufacturing precision
If the reaction layer thickness is increased to improve etching uniformity, then the etching uniformity improves, but the time required for reaction layer formation increases
Solution Approach 1:
The patent optimizes the substrate temperature parameter during reaction layer formation to achieve the most efficient thickness accumulation rate. By selecting the optimal temperature point, the method forms sufficient reaction layer thickness in minimal time while ensuring uniform etching performance
Solution Approach 2:
The patent maintains continuous reaction layer formation through optimized temperature control, ensuring that the process proceeds without interruption or rework. This continuous action at optimized conditions achieves both time efficiency and etching uniformity
3Manufacturing precision
If the substrate temperature is precisely controlled to maintain pattern shape, then the pattern shape control precision improves, but the complexity of temperature control increases
Solution Approach 1:
The patent establishes specific temperature ranges and control parameters for different processing stages. By defining clear parameter specifications, the method achieves precise pattern shape control through straightforward temperature management rather than complex control systems
Solution Approach 2:
The patent utilizes the inherent properties of the reaction layer formation process where temperature control naturally leads to consistent results. The process self-regulates within the specified temperature range, reducing the need for complex external control mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables high-accuracy control of pattern shapes and etching rates, reducing temperature-related variations and improving the precision of SiO2 film removal, even in dense and isolated patterns, by optimizing the temperature settings during reaction layer formation and removal.
Implementation Method 1
setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate
Implementation Method 2
applying energy to the substrate thereby removing the reaction layer from the surface layer of the substrate
Data Source
AI summary
A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.