Automated TEM Crystal Defect Analysis System

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Solution Overview

Problem

Conventional methods for analyzing crystal defects in semiconductor structures rely heavily on human interpretation of TEM images, leading to potential errors in defect detection, classification, and direction determination, which can result in inaccurate semiconductor process estimates.

Innovation Solution

A system and method utilizing an image processor, image generator, and comparator to analyze TEM images, generating virtual TEM images corresponding to three-dimensional structural defects, and comparing them to determine defect types, thereby reducing human error and improving accuracy through automated image processing and reverse engineering.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If an engineer determines defect existence and locations through naked eye observation of TEM images, then the analysis can be performed with simple equipment, but human errors occur such as overlooking or misjudging defects

Engineering Contradiction:
Improvedefect analysis accuracyVSAvoidanalysis system complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent creates virtual TEM images that replicate the appearance and characteristics of real TEM images for various defect types. These synthetic images serve as reference copies that can be compared against actual measurements, enabling automated defect identification without requiring complex manual analysis while maintaining high reliability through pattern matching

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent replaces the mechanical/visual inspection process (engineer viewing TEM images with naked eye) with an automated image processing and comparison system. This substitution eliminates human error in defect detection while the system complexity remains manageable through algorithmic approaches rather than complex hardware

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Measurement precision

If defect types are classified based on empirical analysis by engineers, then the classification process is simple and quick, but the estimates of semiconductor process are inaccurate

Engineering Contradiction:
Improvedefect classification accuracyVSAvoidanalysis time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent pre-generates virtual TEM images representing various known defect types and their characteristics before actual defect analysis is needed. This preliminary preparation creates a reference library that enables rapid comparison and classification during actual measurements, achieving both high precision in defect typing and speed in the analysis process

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements a dynamic comparison process where the measured TEM image is systematically compared against multiple virtual reference images representing different defect types. This dynamic matching approach allows the system to quickly identify the best match through algorithmic processes, achieving accurate classification without time-consuming manual analysis

Inventive Principle:
Principle #15Dynamics

3Difficulty of detecting and measuring

If conventional TEM imaging is used to capture crystal structure images, then the imaging process is straightforward, but it is difficult to determine the direction or type of defect through human eyes

Engineering Contradiction:
Improvedefect direction detectionVSAvoidimage processing complexity
Core Design Contradiction:
Difficulty of detecting and measuringVSDevice complexity

Solution Approach 1:

The patent generates virtual TEM images that incorporate known defect directions, types, and orientations. By comparing the measured image against this library of virtual references with defined characteristics, the system can automatically determine defect direction and type through pattern matching, eliminating the difficulty of visual interpretation while maintaining straightforward imaging

Inventive Principle:
Principle #26Copying

Solution Approach 2:

The patent introduces virtual TEM images as an intermediary between the raw measured image and the defect characterization. These virtual images serve as a bridge that translates complex image pattern recognition into definitive defect direction and type identification, reducing the difficulty of detection without requiring complex additional imaging equipment

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach prevents human errors in defect analysis and enhances the accuracy of semiconductor processes by automating the detection and classification of three-dimensional structural defects using virtual TEM images, leading to improved process estimation and reduced inaccuracies.

Implementation Method 1

electron diffraction using a transmission electron microscope (TEM) has been widely used to analyze a minute structure of materials

Methodology Applied
Scientific EffectElectron diffraction: Diffraction

Data Source

PatentUS10727025B2System and method of analyzing a crystal defect
Publication Date: 2020.07.28 SAMSUNG ELECTRONICS CO LTD
  • US10727025B2 patent drawing
  • US10727025B2 patent drawing
  • US10727025B2 patent drawing

AI summary

A system of analyzing a crystal defect includes an image processor, an image generator, and a comparator. The image processor processes a measured transmission electron microscope (TEM) image that is provided by capturing an image of a specimen having a crystal structure, to provide structural defect information of the specimen. The image generator provides a plurality of virtual TEM images corresponding to a plurality of three-dimensional structural defects of the crystal structure. The comparator compares the measured TEM image with the plurality of virtual TEM images using the structural defect information to determine a defect type of the measured TEM image.