Rotating Substrate Developing Apparatus with Wetted Part
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing developing techniques, such as the stationary and rotational developing schemes, face challenges in achieving uniformity of in-plane line width distribution due to convection issues and concentration changes of the developing solution, leading to uneven resist pattern formation on substrates.
Innovation Solution
A method and apparatus that involve rotating the substrate and using a wetted part with a discharge hole to spread the developing solution widely across the resist film, positioning it above a preceding region to control the line width distribution by holding the solution between the wetted part and the resist film, thereby maintaining concentration and preventing uneven development.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a stationary substrate developing scheme is used, then the developing solution can be applied uniformly across the substrate surface, but the developing solution fails to occur through convection so that degraded reactivity is held in-situ requiring relatively long development time
Solution Approach 1:
The patent transitions from a stationary substrate scheme to a rotating substrate scheme, introducing dynamic motion to the system. The substrate rotates during development, enabling the developing solution to flow across the surface under centrifugal force, thereby refreshing the solution continuously and maintaining high reactivity without extending development time.
Solution Approach 2:
The patent utilizes fluid dynamics principles by allowing the developing solution to flow over the rotating substrate surface. The centrifugal force generated by rotation creates a controlled hydraulic flow pattern that ensures continuous renewal of the developing solution contact with the resist film, preventing stagnation and maintaining effective concentration.
2Productivity
If a rotational developing scheme is used, then the developing solution flows on the substrate enabling reaction, but the concentration changes along the flow direction causing uneven line width distribution
Solution Approach 1:
The patent introduces a wetted part with non-uniform structure (protrusions or recesses) that creates localized variations in solution flow characteristics. This local structural modification ensures that different regions of the substrate receive appropriately controlled developing solution, compensating for the concentration gradients that would otherwise cause line width variations.
Solution Approach 2:
The wetted part acts as an intermediary element between the developing solution and the substrate surface. It mediates the flow and distribution of the developing solution, ensuring uniform concentration delivery across different regions of the rotating substrate, thereby preventing the uneven line width distribution that would result from direct solution flow.
3Reliability
If the developing solution is supplied onto a rotating substrate, then the solution flows and reacts with the resist film, but the concentration change due to flow causes distribution of line width in substrate surface
Solution Approach 1:
The wetted part incorporates local structural features (protrusions or recesses) that create region-specific flow control. This ensures that while the substrate rotates and solution flows for reliable reaction, the local structure compensates for concentration changes by directing solution flow to maintain uniform effective concentration across the substrate surface, thereby achieving uniform line width distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity of in-plane line width distribution by controlling the development process, ensuring consistent line widths across the substrate surface by managing the concentration of the development residue and suppressing the progression of development in critical regions.
Implementation Method 1
supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film
Implementation Method 2
the developing solution supplied onto the substrate flows on the substrate. In this case, since the developing solution flows on the substrate, the developing solution, while flowing, reacts with the resist film
Implementation Method 3
positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate
Data Source
AI summary
There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.