Row-Determining Circuit for DRAM Bank Refresh
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Solution Overview
Problem
Conventional methods for refreshing stressed rows in DRAMs suffer from low efficiency due to row hammer problems, where repeated activation of rows leads to charge leakage and bit flipping in adjacent rows.
Innovation Solution
A row-determining circuit comprising row latches and a target row generator that generates target row records for multiple banks, counts stressed times, and uses a processing unit to generate row address records, enabling an auto-refreshing process to efficiently refresh affected rows.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional refresh methods are used for stressed rows, then row hammer problems can be addressed, but refreshing efficiency remains low
Solution Approach 1:
The memory array is divided into multiple banks, and the row-determining circuit generates different target row records for different banks. This segmentation allows parallel processing of refresh operations across multiple banks, thereby improving refreshing efficiency while effectively addressing row hammer problems in stressed rows
Solution Approach 2:
The row-determining circuit dynamically determines target rows for refresh operations based on stress detection results. The circuit adaptively selects which rows need refreshing in each bank, making the refresh process dynamic and efficient rather than static and uniform, thus improving productivity without compromising reliability
2Quantity of substance
If high cell density is implemented in DRAM, then cell density increases, but row hammer problems occur due to charge leakage and electrical interaction between adjacent rows
Solution Approach 1:
The memory array is segmented into multiple banks, allowing independent control and refresh operations for each bank. This segmentation isolates the electrical interactions between adjacent rows, reducing the propagation of row hammer effects while maintaining high cell density within each bank
Solution Approach 2:
The row-determining circuit acts as an intermediary between stress detection and refresh operations. It processes stress information and generates appropriate target row records for different banks, mediating the response to row hammer problems while preserving the high-density memory structure
Data Source
AI summary
The present disclosure provides a method for refreshing a memory array. The method includes the following steps: generating a plurality of target row records respectively for a plurality of banks; generating a plurality of row address records based on the plurality of target row records; and performing a row-hammer-refreshing process based on the plurality of row address records.