RRAM and Double Capacitor Integration Using a Shared Dielectric Layer

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Solution Overview

Problem

The challenge in semiconductor manufacturing is effectively integrating resistive random access memory (RRAM) and double capacitor structures while minimizing process steps and ensuring a stable, efficient integration.

Innovation Solution

A semiconductor structure is developed that integrates RRAM and a double capacitor by sharing material layers, particularly using a high dielectric constant layer in both components, and forming a contact structure simultaneously to connect electrodes, thereby reducing the need for additional manufacturing steps.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If RRAM and double capacitor are manufactured separately with independent process steps, then each component can be optimized independently, but the total manufacturing process becomes complex and time-consuming

Engineering Contradiction:

Improvecomponent optimizationVSAvoidmanufacturing process

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the manufacturing processes of RRAM and double capacitor into a single integrated process. The variable resistance layer of RRAM and the first high dielectric constant layer of the double capacitor are formed simultaneously using the same deposition process, eliminating the need for separate manufacturing steps and reducing overall process complexity while maintaining component optimization

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The first high dielectric constant layer serves dual functions: as the variable resistance layer for RRAM operation and as the insulating layer for the double capacitor structure. This multi-functionality allows both components to be manufactured using the same material layer, simplifying the manufacturing process while enabling independent optimization of both components

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If additional contact structures are formed to connect RRAM and double capacitor electrodes, then electrical connection is achieved, but manufacturing steps increase and production efficiency decreases

Engineering Contradiction:

Improveelectrical connectionVSAvoidproduction efficiency

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent merges the formation of contact structures into the existing manufacturing process flow. The same deposition and patterning steps used for forming the variable resistance layer and capacitor insulating layer also create the necessary contact structures, eliminating additional manufacturing steps and improving production efficiency while ensuring reliable electrical connections

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If separate material layers are used for RRAM variable resistance and capacitor insulating layer, then each component has optimized material properties, but manufacturing process steps and material usage increase

Engineering Contradiction:

Improvematerial optimizationVSAvoidmanufacturing process

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent employs a universal material layer (first high dielectric constant layer) that serves as both the variable resistance layer for RRAM and the insulating layer for the double capacitor. This single material layer is optimized to fulfill both functional requirements, simplifying the manufacturing process while maintaining the electrical performance needed for both components

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent utilizes the same material layer with different physical or functional states to serve multiple purposes. By controlling deposition parameters and processing conditions, the same first high dielectric constant layer achieves the electrical characteristics required for both RRAM variable resistance and capacitor insulating functions, reducing manufacturing complexity

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This integration method saves process steps, enhances production efficiency, and results in a stable semiconductor structure with simplified manufacturing, while allowing for increased charge storage capacity.

Implementation Method 1

a first high dielectric constant layer in the lower capacitor structure, and the material of the first high dielectric constant layer is the same as the material of the variable resistance layer

Methodology Applied

Scientific EffectDielectric polarization: Dielectric

Data Source

PatentUS20260076106A1Semiconductor structure including resistive random access memory and double capacitor and manufacturing method thereof

Publication Date: 2026.03.12 UNITED MICROELECTRONICS CORP

AI summary

The invention provides a semiconductor structure comprising a resistive random access memory (RRAM) and a double capacitor. The semiconductor structure includes a substrate, wherein a cell region and a capacitor region are defined on the substrate, and the resistive random access memory is located in the cell region, wherein the RRAM comprises a variable resistance layer, and a double capacitor structure is located in the capacitor region, wherein the double capacitor structure comprises a lower capacitor structure and an upper capacitor structure, and the material of a first high dielectric constant layer in the lower capacitor structure is the same as the material of the variable resistance layer.