RRAM Conductive Layer Stack for Excess Current Suppression
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional resistive random access memory devices with cross-point structures face issues with excessive current flow, leading to device destruction, as existing load resistance materials like silicon nitride and silicon oxide do not have linear current-voltage characteristics, making them unsuitable for controlling current effectively.
Innovation Solution
A resistive random access memory device is designed with a conductive layer having alternating layers of tantalum nitride and silicon, which provides higher resistivity and linear current-voltage characteristics, preventing excessive current flow by interposing sufficient resistance between electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single material is used for the conductive layer, then manufacturing is simplified, but dust generation during sputtering increases
Solution Approach 1:
The conductive layer is segmented into multiple thin alternating layers of tantalum nitride and silicon rather than using a single thick layer. This segmentation reduces the amount of material deposited in each sputtering cycle, thereby reducing dust generation while still achieving the desired electrical properties through the composite structure.
Solution Approach 2:
By using a composite material structure of alternating tantalum nitride and silicon layers, the patent reduces dust generation during sputtering compared to single-material deposition. The alternating deposition process allows for better control of material accumulation and reduces particulate contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The conductive layer with alternating tantalum nitride and silicon layers effectively suppresses excessive current, preventing device breakdown and maintaining stable resistance states, while allowing for flexible resistance value design and reduced dust generation during sputtering.
Implementation Method 1
A material of such a load resistance preferably has a higher resistivity than a material to be used for an interconnection or the like and has substantially linear current-voltage characteristics
Implementation Method 2
FIG. 5 is a view illustrating a method of manufacturing a resistive random access memory device according to the first embodiment using a sputtering method
Data Source
AI summary
According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material.