Sacrificial Connections for Semiconductor Leakage Reduction
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Solution Overview
Problem
Existing methods for testing semiconductor devices create capacitive or inductive leakage paths due to severed metal connections at the edges of dies, which can negatively impact device performance.
Innovation Solution
The use of sacrificial connections, such as those in the Under Bump Metallization (UBM) layer, to connect bump pads in the circuit layout, allowing for testing and subsequent removal of these connections to reduce leakage paths, which can be achieved through etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the probe tip method is used for testing, then flexibility for different input/output configurations is improved, but capacitive or inductive leakage paths are created due to severed metal connections
Solution Approach 1:
The patent extracts the problematic metal connections (ground loops) from the final device structure by using sacrificial connections that are deliberately designed to be removed after testing. This extraction eliminates the source of capacitive or inductive leakage while preserving the flexibility benefits during the testing phase.
Solution Approach 2:
The sacrificial connections are established in advance during fabrication to enable flexible probing and testing. These connections perform their useful function temporarily, then are removed after serving their preliminary purpose, preventing the harmful leakage effect from persisting in the final device.
2Reliability
If metal connections are made at the outer edges of the dies in the sawing streets, then proper ground reference connection is achieved, but device performance is degraded due to leakage paths after severing
Solution Approach 1:
The sacrificial connections function as temporary, disposable structures that are intentionally designed to be removed after serving their testing purpose. This approach is analogous to using cheap short-living objects where the temporary structure fulfills its function and is then discarded, in this case through etching removal, to eliminate the harmful leakage effect.
Solution Approach 2:
The sacrificial connections act as intermediary elements that facilitate the testing process by providing temporary ground reference connections. These intermediaries are removed after completing their mediating function, thereby eliminating the source of capacitive or inductive leakage in the final device.
3Stability of the object's composition
If a fixed probe card is used for testing, then electrical path stability is improved, but adaptability to circuit layout changes is reduced
Solution Approach 1:
The patent introduces dynamic adaptability through sacrificial connections that can be configured for different testing scenarios. Unlike a fixed probe card, the sacrificial connection approach allows the electrical paths to be dynamically adjusted and reconfigured based on different circuit layouts, while still providing stable connections during each specific test.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves semiconductor device performance by minimizing capacitive or inductive leakage, enabling more efficient testing and potentially increasing production rates and reducing costs by allowing for additional circuit layouts per wafer and flexible design options.
Implementation Method 1
removing the sacrificial connections can be achieved through etching
Data Source
AI summary
Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or more sacrificial connections and removing at least a portion of the one or more sacrificial connections. In this way, the performance of the semiconductor device is improved by reducing or avoiding capacitive or inductive leakage paths that can be caused by leftover materials.


