Salt Acid Generator for High-Resolution Resist Patterns
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Solution Overview
Problem
Current acid generators for semiconductor fine processing lack effectiveness in producing resist patterns with high resolution and precision, particularly in terms of acid generation and pattern development processes.
Innovation Solution
A salt represented by formula (I) is used as an acid generator in a resist composition, which includes a resin with acid-labile groups and a specific acid generator, allowing for controlled acid generation and improved pattern formation through a multi-step process of application, drying, exposure, and heating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional acid generators are used for semiconductor fine processing, then the basic resist pattern formation can be achieved, but the resolution and precision of the resist patterns are insufficient
Solution Approach 1:
The patent modifies the molecular structure of the acid generator by introducing specific substituents (R1-R8) with defined chemical properties (halogen atoms, hydroxy groups, haloalkyl groups, alkyl groups) at various positions on the aromatic ring. These structural parameter changes enhance the acid generation efficiency and controllability, thereby improving resist pattern resolution and precision while maintaining reliability
Solution Approach 2:
The patent creates a composite acid generator system by combining a specifically structured aromatic compound with sulfonic acid or carboxylic acid groups. This composite structure integrates the benefits of aromatic stability with the acid-generating capability of sulfonic/carboxylic acid groups, achieving both high resolution/precision and reliable acid generation
2Productivity
If the acid generation is not controlled properly, then the pattern development process becomes inefficient, but excessive control complexity may arise
Solution Approach 1:
The acid generator is designed to automatically generate acid upon exposure to specific wavelengths of light, eliminating the need for external catalysts or complex control systems. The molecular structure itself contains the acid-generating capability, allowing the resist pattern development to proceed efficiently through self-driven acid generation when exposed to appropriate radiation
Solution Approach 2:
The acid generator is pre-configured with light-sensitive functional groups that enable it to generate acid immediately upon exposure to specific wavelengths of light. This preliminary preparation of the molecular structure ensures that acid generation occurs precisely when and where needed during the photolithography process, improving development efficiency without adding control complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The salt enhances the resolution and precision of resist patterns by providing controlled acid generation, leading to improved pattern development and reduced defects in semiconductor processing.
Implementation Method 1
a salt represented by formula (I)... an acid generator including the salt... exposing the composition layer... heating the exposed composition layer
Data Source
AI summary
A salt represented by formula (I), a generator and a resist composition:wherein R1 and R2 each independently represent an iodine atom, a fluorine atom or an alkyl fluoride group having 1 to 6 carbon atoms; R4, R5, R7 and R8 each independently represent a halogen atom, a hydroxy group, a haloalkyl group having 1 to 12 carbon atoms or an alkyl group having 1 to 12 carbon atoms, —CH2— included in the haloalkyl group and the alkyl group may be replaced by —O—, —CO—, —S— or —SO2—; X1 and X2 each independently represent an oxygen atom or a sulfur atom; m1 represents 1 to 5, m2 and m8 represent 0 to 5, and m4, m5 and m7 represent an integer of 0 to 4, in which 1≤m1+m7≤5, 0≤m2+m8≤5; and AI− represents an organic anion.