SAM-Directed 2D TMD Stacked Channels for Single-Step Growth
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Solution Overview
Problem
Current transistor structures with stacked channels require multiple growth steps and complex processes, leading to inefficiencies and potential issues in achieving high-density nanowire or nanoribbon formations.
Innovation Solution
The use of self-assembled monolayer (SAM) materials to selectively grow 2D transition metal dichalcogenide (TMD) nanowires or nanoribbons by preferentially treating dielectric surfaces with oxygen plasma, eliminating the need for multiple growth steps and enabling direct stack formation of high-quality nanowires or nanoribbons.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple growth steps are used to form stacked nanowires or nanoribbons, then the transistor density can be increased, but the process complexity and manufacturing time increase significantly
Solution Approach 1:
The patent applies segmentation by using self-assembled monolayers (SAMs) to divide the growth surface into distinct regions, allowing selective growth of nanowires or nanoribbons in specific locations. This enables controlled formation of stacked channels without requiring multiple complex growth steps, as each stack can be formed in a single growth step through spatial segmentation of the substrate surface.
Solution Approach 2:
The patent employs preliminary action by pre-functionalizing the substrate surface with self-assembled monolayers before the growth step. These SAMs are deposited and allowed to self-organize on the substrate, creating predetermined growth sites that guide where nanowires or nanoribbons will form. This preliminary surface preparation eliminates the need for multiple growth steps, as the spatial patterning is established before growth begins.
2Quantity of substance
If multiple growth steps are implemented to achieve high-density stacked channels, then transistor density improves, but manufacturing time and productivity decrease
Solution Approach 1:
The substrate surface is segmented into multiple growth regions using self-assembled monolayers, each region prepared to support nanowire or nanoribbon growth. This segmentation allows all stacked channels to be formed simultaneously in a single growth step rather than requiring sequential growth steps for each stack, thereby maintaining high transistor density while significantly improving manufacturing efficiency.
Solution Approach 2:
The patent merges multiple operations into a single growth step. By pre-preparing the substrate with self-assembled monolayers that define all growth sites, the actual growth process can form all stacked nanowire or nanoribbon channels simultaneously in one step, combining what would otherwise require multiple separate growth operations into a single unified process.
3Manufacturing precision
If complex multi-step processes are used for nanowire growth, then channel formation can be controlled, but the manufacturing precision and quality consistency may suffer
Solution Approach 1:
The self-assembled monolayers are deposited and allowed to self-organize on the substrate before the growth step, creating a stable and uniform template for nanowire or nanoribbon formation. This preliminary action ensures that all growth sites are equally prepared, leading to consistent and reliable channel formation across the entire substrate without the variability that can arise from multiple growth steps.
Solution Approach 2:
The self-assembled monolayers perform the function of defining growth sites and controlling nanowire or nanoribbon formation autonomously through their self-organizing properties. The SAMs automatically create the necessary surface chemistry and topography to guide growth, eliminating the need for complex external control mechanisms and reducing process variability, thereby improving both precision and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the efficient creation of densely packed, high-quality 2D TMD nanowires or nanoribbons in a single stage, reducing process complexity and improving transistor density, thereby addressing the limitations of legacy implementations.
Implementation Method 1
depositing a self-assembled monolayer (SAM) material on the transistor structure, wherein the SAM material is partially deposited on each of the first dielectric layers and extends into each of the gap layers
Implementation Method 2
SAM material may be chosen to passivate a dielectric that includes silicon dioxide (SiO2) or a high-k dielectric
Implementation Method 3
performing oxygen plasma treatment on unprotected areas of the dielectric to cause preferential TMD growth
Data Source
AI summary
Embodiments described herein may be related to apparatuses, processes, and techniques directed to creating a transistor structure by selectively growing a 2D TMD directly in a stacked channel configuration, such as a stacked nanowire or nanoribbon formation. In embodiments, this TMD growth may occur for all of the nanowires or nanoribbons in the transistor structure in one stage. Placement of a SAM on a plurality of dielectric layers within the transistor structure stack facilitates channel deposition and channel geometry in the stacked channel configuration. Other embodiments may be described and/or claimed.