SbGZO Channel Materials for Tunable Memory Transistor Properties
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Solution Overview
Problem
Existing transistors using gallium-zinc-oxide (GZO) materials lack the range of electrical properties and doping effects provided by incorporating antimony, which is not achievable with indium, limiting their performance and versatility in memory devices.
Innovation Solution
Incorporating antimony into GZO to form antimony-gallium-zinc-oxide (SbGZO) materials, which offers a broader range of solid solution solubility and n-type doping effects, enabling more variation in electrical properties and compositions, and can be used in conjunction with indium to enhance transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If indium is incorporated into gallium-zinc-oxide to form IGZO, then the material provides some doping effect, but the range of solid solution solubility and variation in electrical properties is limited
Solution Approach 1:
The patent changes the dopant element from indium to antimony in the gallium-zinc-oxide material. This parameter change (substituting one element for another) results in increased solid solution solubility and broader range of electrical properties, including higher carrier concentrations and mobilities, thereby resolving the contradiction between limited solubility and limited electrical property variation
Solution Approach 2:
The patent creates a composite material system by incorporating antimony into the gallium-zinc-oxide lattice to form SbGZO. This composite approach combines the benefits of the base GZO material with the advantageous properties of antimony doping, achieving both enhanced solubility range and improved electrical property tunability compared to simple IGZO
2Adaptability or versatility
If antimony is incorporated into GZO to form SbGZO, then the range of solid solution solubility and electrical properties is increased, but the device complexity increases
Solution Approach 1:
The patent systematically varies the antimony concentration parameter (x in Sb_xGa_(1-x)ZnO_y) to achieve different electrical properties. By controlling this single compositional parameter, the patent achieves broad tunability of electrical characteristics without requiring complex multi-element systems, thus resolving the contradiction between enhanced adaptability and increased complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SbGZO material provides improved electrical properties and versatility, enabling its use in various memory devices, including volatile and non-volatile memory cells, and different transistor configurations, enhancing their performance and functionality.
Implementation Method 1
incorporation of antimony into GZO does move the Fermi level position away from a valence band, which indicates that the incorporation of antimony into GZO provides an n-type doping effect
Data Source
AI summary
Systems, methods and apparatus are provided for transistors having a first source/drain region, a second source/drain region, and a channel region, wherein the channel region comprises an antimony-gallium-zinc-oxide (SbGZO) material.