Schottky Diode Deep Well Breakdown Voltage
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Solution Overview
Problem
Schottky diodes exhibit low breakdown voltage and high leakage current, limiting their application in high-voltage clamping and saturation prevention.
Innovation Solution
Incorporating a deep-well region of opposite conductivity type under the metal-containing layer and a p-type ring around the edges of the Schottky diode, with the deep-well region vertically overlapping the metal-containing layer and the p-type ring, to extend the depletion region and increase breakdown voltage while reducing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a conventional Schottky diode structure is used, then fast switching performance is achieved, but breakdown voltage remains low
Solution Approach 1:
The patent introduces a deep-well region extending vertically beneath the metal-containing layer, adding a depth dimension to the device structure. This vertical extension creates a longer depletion region path, increasing breakdown voltage while preserving the lateral Schottky junction geometry that enables fast switching
Solution Approach 2:
The deep-well region is nested within the substrate beneath the n-type well region, creating a hierarchical structure where the deep-well is contained within the overall device footprint. This nested configuration increases breakdown voltage without occupying additional lateral space, maintaining fast switching performance
2Strength
If reverse voltage is increased to improve voltage handling, then leakage current increases significantly
Solution Approach 1:
By extending the depletion region vertically through the deep-well structure, the electric field is distributed over a longer path length in the vertical dimension. This reduces field concentration at the metal-semiconductor interface, simultaneously improving voltage handling and reducing leakage current
Solution Approach 2:
The deep-well region acts as an intermediary structure between the metal-containing layer and the substrate, providing a controlled transition zone that manages electric field distribution. This intermediary deep-well region reduces direct field concentration at critical interfaces, lowering leakage while enabling higher voltage operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly enhances breakdown voltage to about 50 volts and reduces leakage current, providing improved performance in voltage clamping and saturation prevention applications.
Implementation Method 1
Incorporating a deep-well region of opposite conductivity type under the metal-containing layer and a p-type ring around the edges of the Schottky diode, with the deep-well region vertically overlapping the metal-containing layer and the p-type ring, to extend the depletion region and increase breakdown voltage
Implementation Method 2
a metal-containing layer on the well region, wherein the metal-containing layer and the well region form a Schottky barrier
Data Source
AI summary
An integrated circuit structure includes a semiconductor substrate; a well region of a first conductivity type over the semiconductor substrate; a metal-containing layer on the well region, wherein the metal-containing layer and the well region form a Schottky barrier; an isolation region encircling the metal-containing layer; and a deep-well region of a second conductivity type opposite the first conductivity type under the metal-containing layer. The deep-well region has at least a portion vertically overlapping a portion of the metal-containing layer. The deep-well region is vertically spaced apart from the isolation region and the metal-containing layer by the well region.