Solid-State Devices TRIZ Cases

Segmented opposite electrode structure with auxiliary electrodes reduces resistance gaps in organic light-emitting displays.

A light-absorbing layer absorbs cyan wavelengths to enable specific color emission from subpixels without patterning individual color filters.

Relocates reflective metal layers to side walls in light emitting devices, preventing etching damage and reducing light loss.

A single-side light-emitting source uses segmented electrodes and light-shielding patterns to direct illumination toward the display panel.

Oxidizing conductive layers within contact holes to form variable resistance layers for non-volatile memory devices.

Selective etching removes polysilicon particles from control and select gates, resolving CMP-induced isolation degradation in integrated semiconductor devices.

A ferroelectric layer between conductive control gate electrodes provides negative capacitance to reduce electrical resistance-capacitance delay.

A resin package recess positions a light reflecting member to direct emitted light, preventing reflector expansion from heat accumulation.

Differentiated fixed charge films suppress dark current while preventing film peeling on etched grooves.

Nested capacitor electrodes reduce pixel area and current load by compensating for manufacturing precision deviations without expanding the display footprint.

A light shielding section embedded in the semiconductor substrate blocks oblique light paths between the photoelectric conversion element and the charge retaining section.

Composite protective patterns shield gate electrodes from etchant damage while reducing vertical width to eliminate voids and seams.

Segmented gate electrodes with lateral projections reduce I-V humps and power consumption in liquid crystal display peripheral circuits.

Ion implantation creates latch-up inhibiting regions in the substrate, increasing holding current and reducing resistances without requiring double guard rings.

A ring pattern layer guides upper and lower hole alignment in 3D memory stacks, suppressing process defects during deep etching.

Segmented substrate regions enable joint loading of memory cells with different gate lengths, resolving adaptability versus complexity trade-offs.

Optical gratings guide and extract fingerprint light rays, eliminating bulky lenses and pinhole filters to reduce device thickness.

Segmented ion implantation forms connected n-type regions in vertical gate NAND bit line pads, overcoming stacked layer masking during sidewall doping.

Segmented charge trap patterns with local insulating regions suppress cell interference in vertical memory devices, maintaining reliability at high densities.

A staircase-shaped protrusion in the insulating layer structure distributes polishing stress during semiconductor planarization.

Varying impurity density in a silicon film prevents constriction during anisotropic etching, ensuring vertical sidewalls for semiconductor devices.

Simultaneous laser decomposition and chemical etching prevents layer breakage, achieving mirror-quality surfaces without mechanical polishing.

An AlNiX alloy reflective film boosts blue light extraction while maintaining low sheet resistance.

A vertical thin film transistor structure increases photosensitive device area in fingerprint identification sensors.

A foldable display panel integrates pressure-sensitive devices within its bending region to detect mechanical deformation and determine the current bending angle.

Multiplexed light shading layers form a collimating structure that screens stray light, resolving blurriness in ultra-thin displays.

Screen printed silicone resin layer eliminates color irregularities by maintaining uniform film thickness over light emitting elements.

Automated voltage correction compensates for actuator variations, eliminating manual calibration time and ensuring uniform droplet volume.

Inverting subpixel arrangements in non-display regions compensates for optical distortions caused by bending, maintaining display quality consistency.

Cooling at less than 3.0°C/min prevents warpage mismatch that causes scratches and film thickness abnormalities.

A polymer structure with aryl and heteroaryl groups enhances power conversion efficiency in organic photovoltaic devices.

Memcapacitor cross-point memory cells use AC voltage to alter capacitance states, eliminating charge dissipation and refreshing needs.

A continuous metal source plate shields memory cells from voltage fluctuations on bit lines.

A semiconductor device uses a dedicated reference cell coupled to a constant-voltage source bit line to enable efficient charge accumulation and output.

A polymer material layer fills openings in a light shielding layer, creating protruding air vents that guide gas escape during adhesive bonding.

A nonplanarized adhesive film prevents color filter detachment while maintaining overlay accuracy and sensitivity.

A shielding layer absorbs or reflects incident laser light to prevent damage to circuit control boards during sapphire substrate removal.

A process control procedure monitors instantaneous deformation values during bonding to constrain geometric parameters within acceptable tolerances.

Alternately stacked gate electrodes and sacrificial layers form vertical channels, enabling enhancement-mode operation for higher integration density.

A flip-chip side emitting LED uses a phosphor window layer to direct light parallel to the active surface for thin backlighting.

Replacing lithium with zinc or bismuth dopants in the hole conductor layer reduces hygroscopicity while maintaining charge carrier transport efficiency.

A shallow trench isolation structure with an air gap prevents photon interference and dark current, ensuring uniform doping profiles.

Embedding sensors in substrate recesses reduces parasitic capacitance by shortening interconnections while protecting elements from physical damage.

A light sensing device uses a filter element with a distinct width relative to adjacent shielding and dielectric structures.

A protection layer shields connection portions during via-hole etching to maintain flat surfaces and electrical contact.

A programmable device architecture separates power routes for core logic and configuration memory to enable independent power control.

A sintering method defines closed patterns with arcuate sections to seal display substrates along non-rectilinear paths.

Three successive light-emitting sub-layers with tailored matrix materials confine excitons to reduce non-radiative transitions and improve current efficiency.

Packaging adhesive expands via thermal expansion to fill gaps between substrates, resolving uneven frit height issues.

Segmented stacked encapsulation layers with concave-convex substrate portions prevent delamination and moisture penetration in OLED devices.

A semiconductor chip uses a localized doping peak in the n-conductive multilayer structure to enhance lateral conductivity and improve charge carrier injection into the active region.

Segmented array substrate integrates polysilicon and metal oxide thin film transistors via annealing to resolve processing compatibility issues.

Segmented sensing levels identify conductive cells before reverse order read operations, reducing power consumption by enabling cell lockout.

Insulating film covers wafer edge regions to create a continuous flat surface, eliminating non-joined bonding defects.

Photolithography patterns hole transport layers to eliminate fine metal masks, reducing alignment time and production costs.

A deformable pin fills the axial keyway clearance to lock an angular position sensor rotor onto a motor shaft.

Extended gate electrodes shield active layers from light exposure, eliminating leakage currents and wavy noise while maintaining aperture ratio.

Tetradentate platinum complexes with imidazole carbene substituents address emission color tuning and sublimation temperature trade-offs in OLED fabrication.

A semiconductor memory device uses a dynamic voltage control strategy to accelerate word line charging during write operations.

A photonic crystal microlens reflects specific visible light wavelengths while transmitting others to photoelectric conversion elements.

Localized heating elements anneal tunnel oxide damage in non-volatile memory cells, extending erase-program cycle counts and reducing required voltages.

A terahertz tunable filter uses microfabricated silicon mirrors with gridded supports to define a variable gap between the optical elements.

A vertical AC LED structure with a conductive substrate dissipates heat through thermal conduction.

Acid cleaning removes oxide films from patterned metal layers, enabling low contact resistance in bottom-gate transistors.

Concave structures paired with convex microlenses collimate wide-angle photons, reducing light loss from large emitting surfaces.

A multi-section insulating layer prevents ion migration between electrodes, resolving insulation reliability issues in organic EL elements.

A semiconductor light emitting device package uses patterned metal pads to increase interface area for better encapsulant adhesion.

This integrated optical stack reduces ambient light reflection to improve outdoor visibility without adding adhesive layers or increasing manufacturing complexity.

Segmented columnar members form high-density arrays, preventing pillar collapse and short circuits during manufacturing.

Integrating sensor and ASIC on a flexible substrate reduces device thickness while improving bonding reliability.

Segmented SrO and TiO nanolayers eliminate abnormal projections on capacitor electrodes, reducing leakage current while maintaining high permittivity.

Nanostructures project into an organic emitter layer to reduce the averaged refractive index and enhance light outcoupling efficiency.

Using a resistance-change element as a select switch eliminates transistor requirements, reducing cell size and manufacturing process complexity.

Extending drain electrodes beyond pixel boundaries increases aperture ratio in TFT LCD array substrates.

A coaxial filter uses a superconductive dissipative matrix to tune cut-off frequency, resolving insufficient stop-band attenuation in cryogenic environments.

Joule heating evaporates organic layers to expose auxiliary electrodes, reducing voltage drops and improving pixel luminance consistency.

Metal-doped alkali salt injection layers improve transmittance and conductivity in light emitting devices without structural perforations.

Interdigitated non-insulative regions around a control region boost capacitance density while insulative layers reduce parasitic capacitance.

A stacked photosensitive structure enables touch detection within a display substrate.

A hydroxy-functionalized organic buffer layer chemically bonds with an epoxy sealant to block moisture and oxygen penetration in OLED displays.

A trapping gate forming process creates an oxide/nitride/oxide layer intersected by a first gate across an active area.

Merging heat slug and encapsulant into one unit reduces manufacturing complexity while improving thermal efficiency via shortened conduction paths.

Magnetic field alignment increases magnetic particle crowding in the electrical connection portion, reducing voltage drop across the OLED array substrate.

A staggered arrangement of pixilated radiation detectors maintains uniform pixel spacing across the imaging field.

A waveguide with a non-uniform color filter directs light to photodiodes, resolving reduced capture at small pixel sizes.

A Schottky diode structure uses a deep-well region to extend the depletion zone vertically beneath the metal contact layer.

A shielding plate isolates the aluminum electrode from fluorine gas, eliminating nonvolatile reaction product deposition that causes surface irregularities.

An organometallic compound stabilizes localized excited states within organic light-emitting device layers.

A micro LED pixel structure uses a reflective layer with variable aperture windows to distribute light emission across the display panel.

An organic solvent system dissolves a composite of semiconductor and insulation compounds to form uniform thin films.

A semiconductor package holder structure bonds a transparent cover to create a sealed air gap.

Segmented sealing layer openings reduce step size to prevent bonding failures while maintaining water protection for organic device reliability.

A carrier relief structure reduces adhesive strength to enable stable high temperature processing and easy solvent based wafer separation.

A ceramic conversion element uses columnar regions with reflective coatings to redirect electromagnetic radiation toward the main surface.

A 3D nonvolatile memory device uses asymmetric channel pillar widths to reduce horizontal footprint while maintaining vertical integration density.

Titanium-oxygen seed layers resolve peeling risks by enhancing bonding strength and crystallization quality in hafnium oxide ferroelectric memory structures.

Segmenting the cover plate with a hollow sealing layer relieves bending stress, preventing film splitting while maintaining stiffness.

A reflective element with a diffuser layer redirects light from micro-LEDs to improve extraction efficiency.