Variable Resistance Layer Formation in Non-Volatile Memory
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Solution Overview
Problem
Conventional non-volatile memory devices face complexities in manufacturing due to the need for multiple embedding steps and difficulty in controlling the thickness and uniformity of variable resistance layers, leading to unstable resistance values and parasitic resistance issues.
Innovation Solution
A method involving the formation of a stacking structure with conductive and insulating layers, followed by the creation of contact holes and variable resistance layers through oxidation, simplifying the process and ensuring uniform thickness by forming the resistance layers concentrically around pillar electrodes, thereby reducing parasitic resistance effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple embedding steps are performed to form variable resistance layers and pillar electrodes, then the memory device structure can be achieved, but the manufacturing process becomes complicated
Solution Approach 1:
The patent combines the formation of variable resistance layers and pillar electrodes into a single embedding step. Instead of performing separate embedding operations for each component, the method embeds both the variable resistance layer material and the pillar electrode material simultaneously into the contact hole, thereby achieving the required structure while simplifying the manufacturing process to require only one embedding operation
2Reliability
If variable resistance layers are formed by embedding material into contact holes, then the memory structure can be created, but uniform thickness control in the depth direction becomes difficult
Solution Approach 1:
The patent employs a self-aligned embedding approach where the variable resistance layer and pillar electrode are formed in a self-organizing manner within the contact hole. The embedding process automatically positions these components with consistent dimensions and uniform thickness through self-alignment mechanisms, eliminating the need for complex external control procedures and achieving precise thickness uniformity
3Manufacturing precision
If conductive layers are exposed during etching to shape variable resistance layers, then strip shaping can be achieved, but spontaneous oxidation occurs causing parasitic resistance
Solution Approach 1:
The patent performs the embedding of variable resistance layer and pillar electrode materials into the contact hole before conducting any etching operations to shape the layers. By completing the material embedding in advance, the conductive layers remain covered and protected during subsequent etching processes, preventing spontaneous oxidation and the formation of parasitic resistance while still allowing precise shape control through the embedding process itself
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, enhances the uniformity and reliability of the non-volatile memory cell array, and stabilizes the resistance values, improving the overall performance of the memory device.
Implementation Method 1
forming a plurality of variable resistance layers by oxidizing part of each of the conductive layers included in each of the layers of the stacking-structure body
Data Source
AI summary
A manufacturing method for manufacturing, with a simple process, a non-volatile memory apparatus having a stable memory performance includes: (a) forming a stacking-structure body above a substrate by alternately stacking conductive layers comprising a transition metal and interlayer insulating films comprising an insulating material; (b) forming a contact hole penetrating through the stacking-structure body to expose part of each of the conductive layers; (c) forming variable resistance layers by oxidizing the part of each of the conductive layers, the part being exposed in the contact hole, and each of the variable resistance layers having a resistance value that reversibly changes according to an application of an electric signal; and (d) forming a pillar electrode in the contact hole by embedding a conductive material in the contact hole, the pillar electrode being connected to each of the variable resistance layers.