Semiconductor Chip Doping Peak for Charge Carrier Injection
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Solution Overview
Problem
LED semiconductor chips with InGaN quantum wells do not increase radiant power in a linear manner with current density due to inefficient charge carrier injection.
Innovation Solution
A semiconductor chip design with a doping profile featuring a high doping concentration peak in the n-conductive multilayer structure, which enhances lateral conductivity and homogeneous charge carrier injection into the active region, reducing sensitivity to electrostatic discharge (ESD).
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If InGaN quantum wells are used in the active region, then radiation generation capability is improved, but charge carrier injection efficiency deteriorates
Solution Approach 1:
The patent applies local quality by creating a doping peak at a specific location within the n-conductive multilayer structure, adjacent to the active region. This localized high doping concentration (exceeding 1×10^19 cm^-3) improves charge carrier injection efficiency at the critical interface with the active region, while other regions maintain their original doping levels. This resolves the contradiction by enhancing injection efficiency locally without compromising the radiation generation capability of the InGaN quantum wells.
Solution Approach 2:
The patent changes the doping concentration parameter by introducing a doping peak with concentration exceeding 1×10^19 cm^-3, which is at least ten times higher than the surrounding regions. This parameter change in the n-conductive multilayer structure improves charge carrier injection efficiency into the active region, thereby resolving the contradiction between radiation generation and injection efficiency.
2Ease of manufacture
If uniform doping is used in the n-conductive multilayer structure, then manufacturing simplicity is maintained, but lateral conductivity and current distribution deteriorate
Solution Approach 1:
The patent introduces a localized doping peak within the n-conductive multilayer structure adjacent to the active region, creating a non-uniform doping profile. This local quality enhancement provides high lateral conductivity (exceeding 1000 S/cm) at the critical interface, improving current distribution without significantly complicating the overall manufacturing process.
Solution Approach 2:
The patent changes the doping concentration parameter by creating a doping peak with concentration exceeding 1×10^19 cm^-3, at least ten times higher than surrounding regions. This parameter change enhances lateral conductivity and current distribution in the critical region while maintaining manufacturing feasibility through selective doping during epitaxial growth.
3Reliability
If high doping concentration is used throughout the n-conductive multilayer structure, then charge carrier injection is improved, but sensitivity to electrostatic discharge deteriorates
Solution Approach 1:
The patent applies local quality by confining the high doping concentration (exceeding 1×10^19 cm^-3) to a specific peak region adjacent to the active region, rather than uniformly doping the entire n-conductive multilayer structure. This localized approach improves charge carrier injection efficiency at the critical interface while maintaining lower doping levels in other regions, thereby reducing overall ESD sensitivity.
Solution Approach 2:
The patent changes the doping concentration parameter by creating a localized peak exceeding 1×10^19 cm^-3 that is at least ten times higher than surrounding regions. This selective parameter change improves charge carrier injection efficiency where needed while maintaining lower doping levels elsewhere, reducing the structure's overall sensitivity to electrostatic discharge.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves improved charge carrier injection and current distribution, leading to increased radiant power and reduced ESD sensitivity in semiconductor chips.
Implementation Method 1
the n-conductive multilayer structure exhibits comparatively high transverse conductivity in the region of the doping peak, i.e., high conductivity in the lateral direction
Implementation Method 2
LED semiconductor chips often have an active region intended for generating radiation, with a plurality of quantum wells
Data Source
AI summary
A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.