Semiconductor Device Latchup Prevention via Single Guard Ring
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Solution Overview
Problem
Integrated circuits with high- and low-voltage transistors face reliability issues due to latchup conditions caused by parasitic PNPN-type silicon controlled rectifiers, which are difficult to prevent without increasing chip size using double guard rings.
Innovation Solution
A semiconductor device with first and second conductive-type high-voltage transistors and low-voltage transistors, featuring conductive-type wells, device isolation films, gate patterns, drift regions, source and drain regions, pick-up regions, and latch-up inhibiting regions formed by ion implantation, which reduce parasitic transistor gains without requiring double guard rings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If double guard rings are used to prevent latchup, then reliability is improved, but chip size increases
Solution Approach 1:
The invention extracts the essential function of latchup prevention from the double guard ring structure and implements it through a simplified single guard ring configuration combined with specific doping profiles and well structures, thereby eliminating the need for the full double guard ring while maintaining reliability
Solution Approach 2:
The invention changes key parameters including doping concentrations, well depths, and guard ring dimensions to optimize latchup prevention performance, allowing a single guard ring to achieve the same protective effect as double guard rings would provide under conventional designs
2Area of stationary object
If conventional single guard ring is used, then chip size is reduced, but latchup prevention capability is insufficient
Solution Approach 1:
The invention applies local quality by creating regions with different doping concentrations and well structures at specific locations within the single guard ring, enhancing its latchup prevention capability in critical areas without requiring a complete double guard ring structure
Solution Approach 2:
The invention uses composite structures combining different doping types (n-type and p-type regions), well structures, and guard ring configurations within a single integrated design, creating a multi-functional structure that provides both size efficiency and robust latchup prevention
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents latchup in integrated circuits by increasing holding current and reducing resistances, improving device performance without the need for double guard rings, thus maintaining reliability and chip size efficiency.
Implementation Method 1
latch-up inhibiting regions formed by ion implantation, which reduce parasitic transistor gains
Data Source
AI summary
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes at least two of first and second conductive-type high-voltage transistors and first and second conductive-type low-voltage transistors. The first conductive-type high-voltage transistor include a first conductive-type well in a semiconductor substrate, a device isolation film in the first conductive-type well, a gate pattern on the first conductive-type well, second conductive-type drift regions in the semiconductor substrate at opposite sides of the gate pattern, second conductive-type source and drain regions in the second conductive-type drift region, a pick-up region to receive a bias voltage, and a first latch-up inhibiting region under the pick-up region. Accordingly, it is possible to reduce and prevent latchup without using a double guard ring and to eliminate an additional process to form first and second latch-up inhibiting regions.