SEB Resistance Evaluation via Computational Simulation
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Solution Overview
Problem
Conventional methods for evaluating single-event burnout (SEB) resistance of semiconductor devices require large and costly radiation facilities, such as accelerators, to generate neutrons for simulation, which is impractical and expensive.
Innovation Solution
A computer simulation method that models a semiconductor device and varies the energy of an excitation source to determine the energy at which thermal runaway occurs, allowing for SEB resistance evaluation without the need for experimental data from large radiation facilities, using simulation software to calculate three-dimensional electron and hole distributions and solve complex equations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If large radiation facilities such as accelerators are used to generate neutrons for SEB resistance evaluation, then measurement precision and reliability are improved, but device complexity and cost increase significantly
Solution Approach 1:
The patent creates a computational model that copies the physical behavior of semiconductor devices under neutron irradiation. Instead of using actual neutrons from accelerators, the invention simulates the excitation source effects through computer calculations, reproducing the same physical phenomena (electron-hole pair generation, carrier multiplication, thermal runaway) in a virtual environment. This allows accurate SEB resistance evaluation without requiring complex radiation facilities.
2Measurement precision
If actual experimental data from accelerator tests is collected, then measurement precision is improved, but loss of time and productivity decrease due to lengthy experimental procedures
Solution Approach 1:
The patent performs preliminary computational setup by creating detailed device models and configuring simulation parameters before running the actual evaluation. The computational model is prepared in advance with all necessary physical parameters (material properties, device geometry, excitation source characteristics), allowing the simulation to proceed rapidly once initiated. This preliminary preparation eliminates the need for time-consuming experimental setup, sample mounting, and facility scheduling required in accelerator-based tests.
Solution Approach 2:
The patent replaces the mechanical/physical system of accelerator-based neutron generation with a computational system. Instead of using large-scale equipment to physically generate neutrons and irradiate devices, the invention uses computer simulations to model the same physical processes. This substitution of mechanical systems with computational ones dramatically reduces evaluation time while maintaining measurement precision.
3Measurement precision
If radiation facilities are installed and managed for SEB evaluation, then measurement precision is improved, but loss of substance and cost increase due to facility maintenance and operation
Solution Approach 1:
The patent makes the evaluation system self-sufficient by using standard computational tools and publicly available physical data to perform SEB resistance evaluation. The computational model uses inherent physical constants and material properties that are already known, eliminating the need for expensive facility operation. The system serves itself by using readily available computational resources instead of requiring dedicated, costly radiation facilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and cost-effective evaluation of SEB resistance in a shorter time without the need for large radiation facilities, reducing costs and eliminating the need for expensive equipment and experimental preparation, while improving development efficiency by allowing for simulation of various device structures.
Implementation Method 1
neutrons passing in the proximity of the Earth's surface produce electron-hole pairs as the neutrons pass through a portion of a semiconductor device
Implementation Method 2
electrons or holes are multiplied in a depletion layer (space charge region) and the semiconductor device is lead to breakdown
Data Source
AI summary
A SEB resistance evaluation method includes: disposing an excitation source within a model of a semiconductor device; and determining an energy of the excitation source at which the semiconductor device exhibits thermal runaway, while varying a voltage applied to the model of the semiconductor device and the energy of the excitation source.