Segmented Buried Power Rails for Thermally Stable FEOL Processing
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Solution Overview
Problem
Scaling semiconductor devices poses challenges due to increased resistance and heat generation from power rails, which are exacerbated by their length-to-width ratio and high-temperature processing, leading to thermomechanical stress failures.
Innovation Solution
Divide buried power rails into multiple segments with shorter lengths to reduce thermomechanical stress failures by minimizing material volume changes during high-temperature processing, and connect these segments to a backside power distribution network.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If power rails are scaled to smaller dimensions, then device size is reduced, but resistance increases and heat generation increases
Solution Approach 1:
The power rail is divided into multiple segments separated by gaps, where each segment has a length less than the total power rail length. This segmentation reduces the material volume in each segment, minimizing thermomechanical stress during high-temperature processing while maintaining electrical connectivity through the gaps.
2Power
If power rail length is increased to provide sufficient power distribution, then power delivery improves, but resistance increases and heat generation increases
Solution Approach 1:
The power rail is divided into multiple segments separated by gaps, where each segment has a length less than the total power rail length. This segmentation reduces the material volume in each segment, minimizing thermomechanical stress during high-temperature processing while maintaining electrical connectivity through the gaps.
Solution Approach 2:
The patent introduces a vertical dimension by forming the segmented power rail structure within a three-dimensional semiconductor device architecture. This allows power distribution along the length while managing thermal and mechanical stress through the segmented configuration, effectively distributing power without proportionally increasing heat generation in any single location.
Data Source
AI summary
Semiconductor devices, and methods of their formation, are provided. The semiconductor device can include a substrate; a wiring level within the substrate; and at least one buried power rail within the wiring level, wherein the at least one buried power rail is divided into a plurality of rail segments, wherein each rail segment of the plurality of rail segments has a length smaller than a total length of the buried power rail.


