Segmented ESD Guard Ring Structure to Prevent Fin Collapse
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Solution Overview
Problem
As semiconductor components become more integral, the volume of ESD guard rings needs to be reduced, leading to the collapse of long strip components and damage to semiconductor performance.
Innovation Solution
An ESD guard ring structure with a hollow rectangular outline, featuring first and second fin structures, polysilicon conductive lines, and single diffusion breaks, is designed to provide electrical isolation while minimizing volume and preventing component collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the volume of the ESD guard ring is reduced to maintain component integrity, then the ESD protection capability is improved, but the structural stability deteriorates causing long strip components to collapse
Solution Approach 1:
The continuous long strip components of the ESD guard ring are divided into multiple segments by introducing single diffusion breaks. These breaks segment the structure into shorter, more stable sections that are less prone to collapse while maintaining the overall ESD protection function. The segmentation reduces the span length of each component section, thereby improving structural stability without compromising the volume reduction needed for ESD protection.
Solution Approach 2:
Single diffusion breaks are introduced as intermediary elements between the long strip components. These diffusion breaks act as mediators that provide structural support and prevent collapse of the reduced-volume components. The diffusion breaks serve as intermediate structures that maintain the integrity of the ESD guard ring while allowing the overall volume to be reduced for better component integrity.
2Strength
If single diffusion breaks are introduced to prevent collapse, then the structural stability is improved, but the device complexity increases
Solution Approach 1:
The formation of single diffusion breaks is merged with the existing ESD guard ring fabrication process. The diffusion breaks are created using the same diffusion steps and masking techniques already employed for the ESD guard ring structure, thereby adding minimal complexity to the overall fabrication process. By combining the diffusion break formation with existing process steps, the device complexity increase is minimized while achieving the desired structural stability.
Data Source
AI summary
An ESD guard ring structure includes numerous first fin structures, numerous second fin structures, numerous first polysilicon conductive lines, numerous second polysilicon conductive lines, numerous third polysilicon conductive lines and numerous single diffusion breaks. Each of the first fin structures includes at least one single diffusion break therein. Each of the single diffusion breaks overlaps one of the third polysilicon conductive lines.